Zobrazeno 1 - 10
of 58
pro vyhledávání: '"Bryan J. Rice"'
Publikováno v:
Applied Physics A. 110:853-856
We investigated the role of prepulse laser wavelength on extreme-ultraviolet (EUV) emission and ionic debris generation. A 6 ns Nd:YAG laser operating at 266 nm was used to generate a pre-plasma that was then reheated by a 35 ns CO2 laser pumping pul
Autor:
Christopher K. Ober, Woo Jin Bae, Dongyan Wang, Micahel F. Zettel, Bryan J. Rice, Emanuel Giannelis, Markos Trikeriotis, Robert Rodriguez, Paul A. Zimmerman, Yi Yi
Publikováno v:
Journal of Photopolymer Science and Technology. 21:621-629
Autor:
Chas Archie, Bhanwar Singh, Iraj Emami, Mark Caldwell, John A. Allgair, E. Solecky, Bryan J. Rice, Benjamin Bunday, Jason P. Cain
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 20:266-277
The conventional premise, long-touted among the semiconductor processing community, that metrology is a ldquonon-value-added necessary evil,rdquo is a misleading and dangerous assertion, which must be viewed as obsolete thinking. Many metrology appli
Autor:
Lan Chen, Idriss Blakey, Bryan J. Rice, Andrew Whitker, Steve Palmacci, Mordy Rothchild, Juan López Gejo, Heping Liu, Nicholas J. Turro, Bronwin Dargaville, Vladmir Liberman, Jeff D. Byers, Paul A. Zimmerman, Xuegong Lei, Chris K. Van Peski
Publikováno v:
Journal of Photopolymer Science and Technology. 20:643-650
Generation-three (Gen-3) immersion lithography can be an enabler for the 32nm half-pitch node. For Gen-3 lithography to be successful, however, there must be three major breakthroughs in materials development: high refractive index ("high-index") len
Publikováno v:
Microelectronic Engineering. 83:1023-1029
One of the many technology decisions facing the semiconductor industry for the 32 nm node (and beyond) is the selection of the best critical dimension (CD) metrology equipment to meet the needs of process equipment suppliers and semiconductor manufac
Autor:
Jeanette M. Roberts, Sang H. Lee, Ted Liang, Terence Bacuita, Eric M. Panning, Guojing Zhang, Melissa Shell, Wang Yueh, Bryan J. Rice, Michael J. Leeson, Uday Shah, Robert L. Bristol, Heidi Cao, Manish Chandhok
Publikováno v:
Microelectronic Engineering. 83:672-675
In this paper we present the latest results on developing and integrating extreme ultraviolet lithography (EUVL) at Intel. The world's first commercial EUV exposure tool was installed in Intel's development fab, linked to a resist track, and had succ
Publikováno v:
Numerical Heat Transfer, Part A: Applications. 49:215-236
Laser-produced plasma (LPP) devices have been modeled as the light source for extreme ultraviolet (EUV) lithography. A key challenge for LPP is achieving sufficient brightness to support the throughput requirements of high-volume manufacturing. An in
Autor:
Brent J. Heuser, Christopher Chrobak, Bryan J. Rice, M. Nieto, Ahmed Hassanein, Jean Paul Allain, Daniel Rokusek, Monica M. C. Allain
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 242:520-522
In extreme ultraviolet lithography (EUVL) environments, transient plasma dynamics dictate conditions for particle/surface interactions. A critical challenge facing EUVL development is optical component lifetime in both gas-discharge-produced plasmas
Autor:
Ahmed Hassanein, Bryan J. Rice, Sivanandan S. Harilal, M. Catalfano, Aloke Kanjilal, A. Al-Ajlony
Publikováno v:
SPIE Proceedings.
The impact of secondary electrons induced contamination of the Ru surface was investigated. Mirror-like Ru sample was bombarded with low energy (100 eV) electrons and the change in surface chemistry was investigated using X-ray photoelectron spectros
Publikováno v:
SPIE Proceedings.
Extreme ultraviolet (EUV) emission from laser-produced plasmas (LPP) centered at 13.5 nm is considered a leading candidate for the light source in future lithography systems. Tin is currently the best material for generating this EUV emission since i