Zobrazeno 1 - 10
of 428
pro vyhledávání: '"Bruus, H."'
Publikováno v:
Phys Rev Lett 109, 108301 (2012)
Possible mechanisms for over-limiting current (OLC) through aqueous ion-exchange membranes (exceeding diffusion limitation) have been debated for half a century. Flows consistent with electro-osmotic instability (EOI) have recently been observed in m
Externí odkaz:
http://arxiv.org/abs/1202.6448
Publikováno v:
Nanoscale Microscale Thermophys. Eng. 11, 57 (2007).
We consider laminar flow of incompressible electrolytes in long, straight channels driven by pressure and electro-osmosis. We use a Hilbert space eigenfunction expansion to address the general problem of an arbitrary cross section and obtain general
Externí odkaz:
http://arxiv.org/abs/physics/0611271
Publikováno v:
Phys. Rev. E 73, 037302 (2006).
Using a Fourier approach we offer a general solution to calculations of slip velocity within the circuit description of the electro-hydrodynamics in a binary electrolyte confined by a plane surface with a modulated surface potential. We consider the
Externí odkaz:
http://arxiv.org/abs/cond-mat/0603013
Publikováno v:
New J. Phys. 8, 37 (2006)
We consider laminar flow of incompressible electrolytes in long, straight channels driven by pressure and electro-osmosis. We use a Hilbert space eigenfunction expansion to address the general problem of an arbitrary cross section and obtain general
Externí odkaz:
http://arxiv.org/abs/physics/0511183
Publikováno v:
Phys. Rev. E 73, 012101 (2006).
We show that in edge-source diffusion dynamics the integrated concentration N(t) has a universal dependence with a characteristic time-scale tau=(A/P)^2 pi/(4D), where D is the diffusion constant while A and P are the cross-sectional area and perimet
Externí odkaz:
http://arxiv.org/abs/cond-mat/0510627
Publikováno v:
Phys. Rev. E 71, 056306 (2005).
We study the electro-hydrodynamics of the Debye screening layer that arises in an aqueous binary solution near a planar insulating wall when applying a spatially modulated AC-voltage. Combining this with first order perturbation theory we establish t
Externí odkaz:
http://arxiv.org/abs/cond-mat/0407160
Detailed experimental studies of the conductance of mesoscopic GaAs devices in the few-mode regime reveal a novel thermal effect: for temperatures up to at least 10 K the measured gate characteristics, i.e. conductance $G$ versus gate voltage $V_g$,
Externí odkaz:
http://arxiv.org/abs/cond-mat/0209465
We present detailed experimental studies of the temperature dependence of the plateau conductance of GaAs quantum point contacts in the temperature range from 0.3 K to 10 K. Due to a strong lateral confinement produced by a shallow-etching technique
Externí odkaz:
http://arxiv.org/abs/cond-mat/0208452
Autor:
Kristensen, A., Bruus, H., Hansen, A. E., Jensen, J. B., Lindelof, P. E., Marckmann, C. J., Nygard, J., Sorensen, C. B., Beuscher, F., Forchel, A., Michel, M.
Publikováno v:
Phys. Rev. B 62, 10950 - 10957 (2000)
The 0.7 (2e^2/h) conductance anomaly is studied in strongly confined, etched GaAs/GaAlAs quantum point contacts, by measuring the differential conductance as a function of source-drain and gate bias as well as a function of temperature. We investigat
Externí odkaz:
http://arxiv.org/abs/cond-mat/0005082
Autor:
Kristensen, A., Bruus, H., Forchel, A., Jensen, J. B., Lindelof, P. E., Michel, M., Nygard, J., Sorensen, C. B.
The 0.7 conductance anomaly in the quantized conductance of trench etched GaAs quantum point contacts is studied experimentally. The temperature dependence of the anomaly measured with vanishing source-drain bias reveals the same activated behavior a
Externí odkaz:
http://arxiv.org/abs/cond-mat/9808007