Zobrazeno 1 - 10
of 57
pro vyhledávání: '"Brut, H."'
Autor:
Besson, C., Morisse, M., Brut, H., Waissi, W., Noel, G., Chauffert, Bruno, Prebay, D., Schott, R., Etienne-Selloum, N.
Publikováno v:
Neuro-Oncology
Neuro-Oncology, 2019, 21 (3), pp.98. ⟨10.1093/neuonc/noz126.360⟩
Neuro-Oncology, 2019, 21 (3), pp.98. ⟨10.1093/neuonc/noz126.360⟩
14th Meeting of the European-Association-of-Neuro-Oncology (EANO), Lyon, FRANCE, SEP 19-22, 2019; International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2755::6315ed9105e8df995023dc7860e7e5a5
https://hal-u-picardie.archives-ouvertes.fr/hal-03598663
https://hal-u-picardie.archives-ouvertes.fr/hal-03598663
Autor:
Chaisantikulwat, W., Mouis, M., gerard ghibaudo, Duncan Kennedy Maude, Cros, A., Harrison, S., Brut, H.
Publikováno v:
Workshop Euro-SOI
Workshop Euro-SOI, 2005, GRANADA, Spain. pp.XX
HAL
Workshop Euro-SOI, 2005, GRANADA, Spain. pp.XX
HAL
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::d8df522caf6e6d4913aaf1e2654815b6
https://hal.archives-ouvertes.fr/hal-00146521
https://hal.archives-ouvertes.fr/hal-00146521
Autor:
Raynaud, C., Faynot, O., Pelloie, J.-L., Tabone, C., Grouillet, A., Martin, F., Dambrine, G., Vanmackelberg, M., Picheta, L., Mackowiak, E., Brut, H., Llinares, P., Sevenhans, J., Compagne, E., Fletcher, G., Flandre, D., Dessard, V., Vanhoenacker, D., Raskin, J.-P.
Publikováno v:
Raynaud, C. ; Faynot, O. ; Pelloie, J.-L. ; Tabone, C. ; Grouillet, A. ; Martin, F. ; Dambrine, G. ; Vanmackelberg, M. ; Picheta, L. ; Mackowiak, E. ; Brut, H. ; Llinares, P. ; Sevenhans, J. ; Compagne, E. ; Fletcher, G. ; Flandre, D. ; Dessard, V. ; Vanhoenacker, D. ; Raskin, J.-P. (2000) 70 GHZ FMAX fully-depleted SOI MOSFET’S for low-power wireless applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
For the first time, excellent microwave performances including high frequency noise are ported for 0.25 micron gate channel length Fully Depleted (FD) Silicon-on-Insulator (SOI) MOSFET’s: a maximum extrapolated oscillation frequency (fmax) of 70 GH
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0257ec43ec55b925305eb7b4045cf272
Publikováno v:
2008 IEEE International Conference on Microelectronic Test Structures; 2008, p160-165, 6p
Publikováno v:
2007 IEEE International Conference on Microelectronic Test Structures; 2007, p97-100, 4p
Publikováno v:
2007 IEEE International Conference on Microelectronic Test Structures; 2007, p89-92, 4p
Autor:
Cros, A., Romanjek, K., Fleury, D., Harrison, S., Cerutti, R., Coronel, P., Dumont, B., Pouydebasque, A., Wacquez, R., Duriez, B., Gwoziecki, R., Boeuf, F., Brut, H., Ghibaudo, G., Skotnicki, T.
Publikováno v:
2006 International Electron Devices Meeting; 2006, p1-4, 4p
Publikováno v:
Proceedings of the 2005 International Conference on Microelectronic Test Structures, 2005 (ICMTS 2005); 2005, p69-74, 6p
Publikováno v:
Proceedings of the 2004 International Conference on Microelectronic Test Structures (IEEE Cat. No.04CH37516); 2004, p303-308, 6p
Publikováno v:
Proceedings of the 2004 International Conference on Microelectronic Test Structures (IEEE Cat. No.04CH37516); 2004, p253-256, 4p