Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Bruno M. LaFontaine"'
Publikováno v:
Journal of Photopolymer Science and Technology. 19:525-531
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b8b8d97021a38ec51a6c21a14e7a608
https://doi.org/10.2494/photopolymer.19.525
https://doi.org/10.2494/photopolymer.19.525
Autor:
Dimitra Niakoula, Kenneth A. Goldberg, Tom Wallow, Jerrin Chiu, Christopher N. Anderson, Andy Ma, Paul Denham, Sungmin Huh, Bruno M. LaFontaine, Gideon Jones, Joo-on Park, Patrick P. Naulleau, Brian Hoef, Kim Dean
Publikováno v:
SPIE Proceedings.
Microfield exposure tools (METs) continue to play a dominant role in the development of extreme ultraviolet (EUV) resists. Here we present an update on the SEMATECH Berkeley 0.3-NA MET and summarize the latest test results from high-resolution line-s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0cc8e2aa23df073eb87d67dbe393a1b
https://doi.org/10.1117/12.773833
https://doi.org/10.1117/12.773833
Autor:
Ryoung-han Kim, Hiroyuki Mizuno, Bart Kessels, Robert Routh, Emil Schmit-Weaver, John C. Arnold, Kevin Cummings, Uzodinma Okoroanyanwu, Bruno M. LaFontaine, Andre van Dijk, Tom Wallow, Kurt R. Kimmel, Dave Medeiros, Chiew-seng Koay, Obert R. Wood, Michael Crouse, Yunfei Deng, Cyrus E. Tabery, Brian Niekrewicz, Judy Galloway, Karen Petrillo, Satyavolu S. Papa Rao, Youri van Dommelen, Sjoerd Lok, Brian Lee, Anna Tchikoulaeva, Yunpeng Yin, Harry J. Levinson, James Word, Bill Pierson, Don Canaperi, Rolf Seltmann, Matthew E. Colburn, Erin Mclellan, Sang-In Han, Sarah N. McGowan, Sander Bouten
Publikováno v:
SPIE Proceedings.
In this paper, we describe the integration of EUV lithography into a standard semiconductor manufacturing flow to produce demonstration devices. 45 nm logic test chips with functional transistors were fabricated using EUV lithography to pattern the f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d8a2f823e7414d5c5822d258ea5f67d
https://doi.org/10.1117/12.772933
https://doi.org/10.1117/12.772933
Autor:
Jason P. Cain, Bruno M. LaFontaine, Oleg Kritsun, Amogh Prabhu, Kevin R. Lensing, Alok Vaid, Robert J. Chong, Richard Good
Publikováno v:
SPIE Proceedings.
In this paper, results and analysis are presented from Advanced Micro Devices' (AMD) efforts at calculating lithography dose and focus parameters using scatterometry metrology and semi-physical CD models. The system takes advantage of the accurate an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1abf9a980d37f02f107fcaf6366fbc6
https://doi.org/10.1117/12.711548
https://doi.org/10.1117/12.711548
Autor:
Patrick P. Naulleau, Ryoung-han Kim, Thomas Wallow, Richard L. Sandberg, Bruno M. LaFontaine, Christopher N. Anderson
Publikováno v:
23rd European Mask and Lithography Conference.
Resist resolution remains a significant issue for EUV. Strong concerns persist regarding the use of chemically amplified resists owing to their diffusion characteristics. Current EUV resist development is focused on a) large-scale screening efforts i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebfe8905cb7a353984ebc3836245f45c
https://doi.org/10.1117/12.737189
https://doi.org/10.1117/12.737189
Autor:
Obert Wood, P. Kearney, Hak-Seung Han, John S. Taylor, Kenneth A. Goldberg, Bruno M. LaFontaine, Seno Rekawa, Anton Barty
Publikováno v:
SPIE Proceedings.
The production of defect-free mask blanks remains a key challenge for EUV lithography. Mask-blank inspection tools must be able to accurately detect all critical defects while simultaneously having the minimum possible false-positive detection rate.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ced9651d61d7ab1a8edb97ff74948570
https://doi.org/10.1117/12.686742
https://doi.org/10.1117/12.686742
Autor:
A. Galvanauskas, Martin Richardson, Simi George, John Nees, Bruno M. LaFontaine, Aghapi Mordovanakis, Kai Chung Hou, Kazutoshi Takenoshita
Publikováno v:
Optics Express. 16:965
In this paper we report the development of nanosecond-pulsed fiber laser technology for the next generation EUV lithography sources. The demonstrated fiber laser system incorporates large core fibers and arbitrary optical waveform generation, which e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ba2e665929b376f6740bbf0b78329cf9
https://doi.org/10.1364/oe.16.000965
https://doi.org/10.1364/oe.16.000965
Autor:
Bixue Hou, John Nees, Kai Chung Hou, Aghapi Mordovanakis, Ming Yuan Cheng, Almantas Galvanauskas, Anatoly Maksimchuk, Bruno M. LaFontaine, Yu Chung Chang, Gerard Mourou
Publikováno v:
Optics Letters. 31:2517
Efficient generation of extreme UV (EUV) light at lambda = 13.5 nm from a bulk Sn target has been demonstrated by using a fiber laser. The conversion efficiency from the 1064 nm IR to the EUV was measured to be around 0.9% into 2pi steradians within
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d2b6f45669677fb8f4815dd80d8b252d
https://doi.org/10.1364/ol.31.002517
https://doi.org/10.1364/ol.31.002517