Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Bruno Lepine"'
Autor:
Sumita Choudhary, J. V. N. Sarma, Surojit Pande, Soraya Ababou-Girard, Pascal Turban, Bruno Lepine, Subhashis Gangopadhyay
Publikováno v:
AIP Advances, Vol 8, Iss 5, Pp 055114-055114-16 (2018)
Controlled thermal oxidations of thin copper films at relatively lower temperatures (up to 500°C) leading towards the formation of a single phase of copper oxide are investigated where the oxidation temperature, duration, oxygen partial pressure, fi
Externí odkaz:
https://doaj.org/article/683458ed478e45b99744bbaa1f5241d9
Autor:
Shabnam Dadgostar, Jose Luis Pura Ruiz, Jorge Serrano Gutierrez, Bruno Lepine, Philippe Schieffer, Juan Jimenez
Publikováno v:
UVaDOC. Repositorio Documental de la Universidad de Valladolid
instname
Materials Science and Engineering: B
Materials Science and Engineering: B, 2022, 283, pp.115830. ⟨10.1016/j.mseb.2022.115830⟩
instname
Materials Science and Engineering: B
Materials Science and Engineering: B, 2022, 283, pp.115830. ⟨10.1016/j.mseb.2022.115830⟩
Producción Científica
The luminescence of SrTiO3 depends on the sample type, either doped or stoichiometric, as grown or treated, the excitation conditions, and temperature. The origin of the luminescence emissions, blue, green, and infrared,
The luminescence of SrTiO3 depends on the sample type, either doped or stoichiometric, as grown or treated, the excitation conditions, and temperature. The origin of the luminescence emissions, blue, green, and infrared,
Autor:
Bienlo Flora Zerbo, Mircea Modreanu, Ian Povey, Jun Lin, Antoine Létoublon, Alain Rolland, Laurent Pédesseau, Jacky Even, Bruno Lépine, Pascal Turban, Philippe Schieffer, Alain Moréac, Olivier Durand
Publikováno v:
Crystals, Vol 12, Iss 10, p 1363 (2022)
Silicon-based heterojunction (SHJ) solar cells demonstrate high efficiencies over their homojunction counterparts, revealing the potential of such technologies. We present here the first steps towards the development of molybdenum disulfide (MoS2)/c-
Externí odkaz:
https://doaj.org/article/887267700e23466da84f3d01a9d76452
Autor:
Jules Courtin, Alain Moréac, Gabriel Delhaye, Bruno Lépine, Sylvain Tricot, Pascal Turban, Philippe Schieffer, Jean-Christophe Le Breton
Publikováno v:
Applied Sciences, Vol 9, Iss 23, p 5014 (2019)
Fermi level pinning at metal/semiconductor interfaces forbids a total control over the Schottky barrier height. 2D materials may be an interesting route to circumvent this problem. As they weakly interact with their substrate through Van der Waals fo
Externí odkaz:
https://doaj.org/article/cc60f5b58895426ab69febcb66b88d90