Reduction of Schottky Barrier Height at Graphene/Germanium Interface with Surface Passivation

Autor: Jules Courtin, Alain Moréac, Gabriel Delhaye, Bruno Lépine, Sylvain Tricot, Pascal Turban, Philippe Schieffer, Jean-Christophe Le Breton

Publikováno v: Applied Sciences, Vol 9, Iss 23, p 5014 (2019)

Fermi level pinning at metal/semiconductor interfaces forbids a total control over the Schottky barrier height. 2D materials may be an interesting route to circumvent this problem. As they weakly interact with their substrate through Van der Waals fo

Externí odkaz: https://doaj.org/article/cc60f5b58895426ab69febcb66b88d90

Optical and structural characterization of thin MoS2 layers on SiO2/Si substrates, towards the development of MoS2/Si heterojunction photovoltaics

Autor: Laurent Pedesseau, Mircea Modreanu, Philippe Schieffer, Antoine Létoublon, Jacky Even, Bruno Lépine, Pascal Turban, Alain Moréac, Olivier Durand, Bienlo Zerbo, Alain Rolland, Ian M. Povey

Publikováno v: IEEE Xplore
44th International Semiconductor Conference (CAS 2021)
44th International Semiconductor Conference (CAS 2021), Oct 2021, Online, Romania. ⟨10.1109/CAS52836.2021.9604140⟩

International audience; In this paper, we present the first steps of a process toward the development of MoS2/Si heterojunctions photovoltaics, using 2D 2H-MoS2, whose natural abundance and tunable bandgap make it suitable for such application. A foc

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::44cdbd3a51ecb8411b7e6218131982fb
https://hal.science/hal-03796793

A low Schottky barrier height and transport mechanism in gold-graphene-silicon (001) heterojunctions

Autor: Alain Moréac, Sylvain Tricot, Sylvain Le Gall, Pascal Turban, Pascal Chrétien, Bruno Lépine, Gabriel Delhaye, Jules Courtin, Jean-Christophe Le Breton, Philippe Schieffer

Publikováno v: Nanoscale Advances
Nanoscale Advances, RSC, 2019, 1 (9), pp.3372-3378. ⟨10.1039/C9NA00393B⟩
Nanoscale Advances, 2019, 1 (9), pp.3372-3378. ⟨10.1039/C9NA00393B⟩

International audience; The interface resistance at metal/semiconductor junctions has been a key issue for decades. The control of this resistance is dependent on the possibility to tune the Schottky barrier height. However, Fermi level pinning in th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b570697264f5debc0289314b92c156cc
https://pubmed.ncbi.nlm.nih.gov/36133562

Effect of oxygen vacancies at the Fe/SrTiO3(001) interface: Schottky barrier and surface electron accumulation layer

Autor: Sylvain Tricot, Philippe Schieffer, Gabriel Delhaye, Pascal Turban, P. Catrou, Bruno Lépine, J. C. Le Breton

Publikováno v: Physical Review B. 98

We have investigated the interface formation at room temperature between Fe and ${\mathrm{TiO}}_{2}$-terminated ${\mathrm{SrTiO}}_{3}(001)$ surface using x-ray photoelectron spectroscopy. Oxygen vacancies within the ${\mathrm{SrTiO}}_{3}$ lattice in

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2b8f6bc6c7862594fab3af78dc616087
https://doi.org/10.1103/physrevb.98.115402

Band Alignments in Fe/Graphene/Si(001) Junctions Studied by X-ray Photoemission Spectroscopy

Autor: Bruno Lépine, Philippe Schieffer, Gabriel Delhaye, Sylvain Tricot, J. C. Le Breton, Pascal Turban

Publikováno v: Journées Surface et Interfaces 2017
Journées Surface et Interfaces 2017, Jan 2017, Rennes, France
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2016, 109 (5), pp.051601. ⟨10.1063/1.4960199⟩
Applied Physics Letters, 2016, 109 (5), pp.051601. ⟨10.1063/1.4960199⟩
International Conference on the Formation of Semiconductor Interfaces
International Conference on the Formation of Semiconductor Interfaces, Jul 2017, Hanover, Germany

International audience; The control of tunnel contact resistance is of primary importance for semiconductor-based spintronic devices. This control is hardly achieved with conventional oxide-based tunnel barriers due to deposition-induced interface st

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a447af23ae71296788050729f3674a4a
https://hal.archives-ouvertes.fr/hal-01454880