Zobrazeno 1 - 10
of 385
pro vyhledávání: '"Bruno K. Meyer"'
Autor:
Peter J. Klar, Fabian Michel, Jie Jiang, M. Kracht, Bruno K. Meyer, Christian T. Reindl, Yinmei Lu, Martin Eickhoff, B. Kramm
Publikováno v:
physica status solidi (b). 253:1087-1092
The influence of nitrogen incorporation in high concentrations on the structural properties and morphology of SnO2–xNx thin films grown by chemical vapor deposition is studied. A decrease in crystallite size and a lattice expansion in SnO2–xNx fi
Autor:
Jie Jiang, Yunbin He, Yinmei Lu, Angelika Polity, Bruno K. Meyer, Limei Chen, B. Kramm, Peter J. Klar, Martin Becker
Publikováno v:
Vacuum. 122:347-352
Tin dioxide (SnO2) thin films were deposited on quartz glass substrates by chemical vapor deposition using SnI2 and O2 as reactants. The growth experiments were carried out in the substrate temperature range of 300–900 °C. X-ray diffraction, scann
Autor:
C. Xia, Jie Jiang, Bruno K. Meyer, Yunbin He, Peter J. Klar, Y.M. Lu, B. Kramm, Angelika Polity
Publikováno v:
Thin Solid Films. 594:270-276
Tin dioxide (SnO2) thin films were grown on c-plane sapphire substrates by chemical vapor deposition using SnI2 and O2 as reactants. The growth experiments were carried out at a fixed substrate temperature of 510 °C and different O2 flow rates. X-ra
Autor:
Claus-Dieter Kohl, Bruno K. Meyer, Bernd M. Smarsly, Daniel Reppin, Jörg Hennemann, Hauke Metelmann, Stefanie Russ, Thorsten Wagner, Jürgen Janek, Marcus Rohnke
Publikováno v:
Sensors and Actuators B: Chemical. 217:41-50
Semiconducting copper oxide (CuO) gas sensing layers show a remarkable conductance behavior if exposed to hydrogen sulfide (H2S) gas at low operating temperature (180 °C). At first conductance decreases as expected for a p-type semiconducting metal
Publikováno v:
physica status solidi (RRL) - Rapid Research Letters. 9:326-330
Ion-beam sputter-deposition (IBSD) was used to reactively deposit tin oxide crystalline films at oxygen fluxes of 3–15 sccm and at substrate temperatures of 100–600 °C. Analysing the samples by X-ray diffraction and Raman spectro- scopy yields a
Autor:
A. Kronenberger, Thomas Melzig, Michael Siemers, Bruno K. Meyer, Andreas Pflug, Volker Sittinger, J. Oberste Berghaus, Christina Schulz, W. De Bosscher
Publikováno v:
Surface and Coatings Technology. 267:75-80
In the last years, amorphous oxide films like indium gallium zinc oxide (IGZO) received increasing attention as channel layers in thin film transistors (TFTs). First IGZO-based devices are being successfully introduced into the display market. Howeve
Publikováno v:
Journal of Materials Chemistry C. 3:339-344
Stable p-type doping of ZnO has been a major technical barrier for the application of ZnO in optoelectronic devices. While p-type conductivity for nitrogen-doped ZnO has been repeatedly reported, its origin remains mysterious. Here, using first-princ
Publikováno v:
Journal of Alloys and Compounds. 617:413-417
High-quality ZnO 1− x S x thin films were grown on (0 0 1) sapphire substrates in the temperature range of 300–800 °C by pulsed laser deposition (PLD) with a ZnS ceramic target and O 2 as reactive gas. By increasing the substrate temperature, th
Autor:
Lei Zhang, Yinmei Lu, Yunbin He, Bruno K. Meyer, Liangheng Wang, Xunzhong Shang, Xiong Liu, Mingkai Li
Publikováno v:
Journal of Alloys and Compounds. 587:369-373
We report on a detailed investigation of the structural and optical properties of single crystalline ZnO1� xSx thin films, placing emphasis on the elucidation of the correlation of the band gap and lattice parameters, particularly the lattice const
Hydrogen sorption and desorption kinetics and hydrogenation stability of Mg-metal-hydride thin films
Publikováno v:
Sensors and Actuators A: Physical. 206:127-131
The intermetallic compounds of Mg with Al, Fe, V, Ti and Zn were investigated concerning their hydrogenation and dehydrogenation behavior by near infrared optical measurements. Pd-capped Mg-metal thin films were prepared by RF magnetron sputtering. S