Domain formation mechanism of the Si(110)'16 x 2' reconstruction

Autor: Lewis, N. K., Clayburn, N. B., Brunkow, E., Gay, T. J., Lassailly, Y., Fujii, J., Vobornik, I., Flavell, W. R., Seddon, E. A.

Publikováno v: Phys. Rev. B 95, 205306 (2017)

The main factor that determines which of the two domains form upon reconstruction of the Si(110)"16 x 2" surface has been investigated. LEED and STM images showed that the domain orientation was independent of the heating current direction used to in

Externí odkaz: http://arxiv.org/abs/1806.04375

Domain formation mechanism of the Si(110)\16 2' reconstruction

Autor: Lewis N.K., Clayburn N.B., Brunkow E., Gay T.J., Lassailly Y., Fujii J., Vobornik I., Flavell W.R., Seddon E.A.

Publikováno v: Lewis, N, Clayburn, N B, Brunkow, E, Gay, T J, Lassailly, Y, Fujii, J, Vobornik, I, Flavell, W & Seddon, E 2017, ' Domain formation mechanism of the Si(110)\16 2" reconstruction ', Physical Review B . https://doi.org/10.1103/PhysRevB.95.205306
Physical Review B 95 (2017). doi:10.1103/PhysRevB.95.205306
info:cnr-pdr/source/autori:Lewis N.K.; Clayburn N.B.; Brunkow E.; Gay T.J.; Lassailly Y.; Fujii J.; Vobornik I.; Flavell W.R.; Seddon E.A./titolo:Domain formation mechanism of the Si(110) " 16×2 " reconstruction/doi:10.1103%2FPhysRevB.95.205306/rivista:Physical Review B/anno:2017/pagina_da:/pagina_a:/intervallo_pagine:/volume:95

The main factor that determines which of the two domains forms upon reconstruction of the Si(110) "16×2" surface has been investigated. Low-energy electron diffraction (LEED) and scanning tunneling microscopy (STM) images showed that the domain orie

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::5f3bf80678103ce5b9f6154a2c4807cf
https://www.research.manchester.ac.uk/portal/en/publications/domain-formation-mechanism-of-the-si11016-2-reconstruction(b7b00789-30db-49a5-9a02-492ae5081d59).html

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