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Autor:
Kalyuzhnyy, Nikolay A., Mintairov, Sergey A., Salii, Roman A., Nadtochiy, Alexey M., Payusov, Alexey S., Brunkov, Pavel M., Nevedomsky, Vladimir N., Shvarts, Maxim Z., Martí Vega, Antonio, Andreev, Viacheslav M., Luque López, Antonio
Publikováno v:
Progress in Photovoltaics, ISSN 1062-7995, 2016-06-14, Vol. 24, No. 9
Archivo Digital UPM
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Archivo Digital UPM
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Research into the formation of InAs quantum dots (QDs) in GaAs using the metalorganic vapor phase epitaxy technique ispresented. This technique is deemed to be cheaper than the more often used and studied molecular beam epitaxy. The bestconditions fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::d801de02e33a3d2ed433ad0273f53a1f
http://oa.upm.es/45996/
http://oa.upm.es/45996/