Výsledky vyhledávání - "Brunetti, Rossella"

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Hot-carrier trap-limited transport in switching chalcogenides

Autor: Piccinini, Enrico, Cappelli, Andrea, Buscemi, Fabrizio, Brunetti, Rossella, Ielmini, Daniele, Rudan, Massimo, Jacoboni, Carlo

Chalcogenide materials have received great attention in the last decade owing to their application in new memory systems. Recently, phase-change memories have, in fact, reached the early stages of production. In spite of the industrial exploitation o

Externí odkaz: http://arxiv.org/abs/1208.1635

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Conduction, diffusion and noise of electrons in amorphous chalcogenides at low electric fields

Autor: Buscemi, Fabrizio, Piccinini, Enrico, Brunetti, Rossella, Rudan, Massimo, Jacoboni, Carlo

The low-field electron diffusion, noise, and the conduction in amorphous chalcogenides are investigated by means of a Monte Carlo implementation of a full three- dimensional variable-range hopping transport model between localized states. Quantities

Externí odkaz: http://arxiv.org/abs/1202.3608

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Electrostatic Doping and Devices

Autor: Hueting, Raymond J.E., Gupta, Gaurav, Rudan, Massimo, Brunetti, Rossella, Reggiani, Susanna

Publikováno v: Springer Handbook of Semiconductor Devices, 371-389
STARTPAGE=371;ENDPAGE=389;TITLE=Springer Handbook of Semiconductor Devices
Springer Handbook of Semiconductor Devices ISBN: 9783030798260

Electrostatic doping is widely emerging as an alternative approach to overcome the limitations of traditional chemical doping to provide high charge carrier densities in nanometer-scale semiconductor devices. In this chapter (this work is partly base

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f5476cc4314e1376bf2915c038d26ab8
https://research.utwente.nl/en/publications/0b241ef5-3727-4a51-a333-2cb093e72592

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