Statistical and Electrical Modeling of FDSOI Four-Gate Qubit MOS Devices at Room Temperature

Autor: Edoardo Catapano, Gerard Ghibaudo, Mikael Casse, Tadeu Mota Frutuoso, Bruna Cardoso Paz, Thomas Bedecarrats, Agostino Apra, Fred Gaillard, Silvano De Franceschi, Tristan Meunier, Maud Vinet

Publikováno v: IEEE Journal of the Electron Devices Society, Vol 9, Pp 582-590 (2021)

This paper presents an electrical characterization and a compact modeling of FD-SOI four-gate qubit MOS devices, carried out at room temperature and in linear regime. The main figures of merit are extracted from average drain current curves using Y �

Externí odkaz: https://doaj.org/article/2ec3dad1d9f149a19156e3826f686985

Probing Low-Frequency Charge Noise in Few-Electron CMOS Quantum Dots

Autor: Cameron Spence, Bruna Cardoso Paz, Vincent Michal, Emmanuel Chanrion, David J. Niegemann, Baptiste Jadot, Pierre-André Mortemousque, Bernhard Klemt, Vivien Thiney, Benoit Bertrand, Louis Hutin, Christopher Bäuerle, Maud Vinet, Yann-Michel Niquet, Tristan Meunier, Matias Urdampilleta

Publikováno v: Physical Review Applied
Physical Review Applied, 2023, 19 (4), pp.044010. ⟨10.1103/PhysRevApplied.19.044010⟩

International audience; Charge noise is one of the main sources of environmental decoherence for spin qubits in silicon, presenting a major obstacle in the path towards highly scalable and reproducible qubit fabrication. Here we demonstrate in-depth

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::17a5951618215b1ce92735f7910cc2fc
https://hal.science/hal-04062049

Performance and Low-Frequency Noise of 22-nm FDSOI Down to 4.2 K for Cryogenic Applications

Autor: Tristan Meunier, Mikael Casse, Fred Gaillard, Silvano De Franceschi, Maud Vinet, Thorsten Kammler, Christoforos G. Theodorou, L. Pirro, Gerard Ghibaudo, Bruna Cardoso Paz

Publikováno v: IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2020, 67 (11), pp.4563-4567. ⟨10.1109/TED.2020.3021999⟩
IEEE Transactions on Electron Devices, 2020, 67 (11), pp.4563-4567. ⟨10.1109/TED.2020.3021999⟩

International audience; This work presents the performance and low-frequency noise (LFN) of 22-nm fully-depleted silicon-on-insulator (FDSOI) CMOS technology. The experimental measurements and the analysis are performed as a function of temperature f

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::708b694d06bf0840770eb2e9e8c5635d
https://doi.org/10.1109/ted.2020.3021999

Analysis of Mobility in Graded-Channel SOI Transistors Aiming at Circuit Simulation

Autor: Michelly de Souza, Bruna Cardoso Paz, Lucas Mota Barbosa da Silva

Publikováno v: Biblioteca Digital de Teses e Dissertações da FEI
Centro Universitário da Fundação Educacional Inaciana (FEI)
instacron:FEI

This work presents an analysis of the behavior of the effective mobility of graded-channel FD SOI transistors us-ing an Y-Function-based technique. Low field mobility, linear and quadratic attenuation factors were extracted from two-di-mensional nume

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::90c2e474f13a6c7c75ecbfcfecb782b1
https://doi.org/10.29292/jics.v15i2.188

Low temperature influence on performance and transport of Ω-gate p-type SiGe-on-insulator nanowire MOSFETs

Autor: Olivier Faynot, Mikael Casse, Gilles Reimbold, Marcelo Antonio Pavanello, Sylvain Barraud, Bruna Cardoso Paz, Maud Vinet

Publikováno v: Solid-State Electronics. 159:83-89

This work evaluates the operation of p-type Si0.7Ge0.3-On-Insulator (SGOI) nanowires from room temperature down to 5.2 K. Electrical characteristics are shown for long channel devices comparing narrow Ω-gate to quasi-planar MOSFETs (wide fin width).

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a80db5615e82594ea6e4cf4a301db5bd
https://doi.org/10.1016/j.sse.2019.03.041