Quantification of Interfacial Voids Using Positron Annihilation Spectroscopy for Mechanism Study on SiCN Bonding and SiN Bonding

Autor: Yang, Y., Brun, X. F., Weber, M. H., Flores, M.

Publikováno v: ECS Journal of Solid State Science and Technology; January 2024, Vol. 13 Issue: 11 p113002-113002, 1p