Ion projection surface structuring with noble gas ions at 75 keV

Autor: Bruenger, W.H., Dietzel, A.H., Loeschner, H.

Publikováno v: In Surface & Coatings Technology 2007 201(19):8437-8441

Nanocomposite resist systems for next generation lithography

Autor: Merhari, L ^∗, Gonsalves, K.E, Hu, Y, He, W, Huang, W.-S, Angelopoulos, M, Bruenger, W.H, Dzionk, C, Torkler, M

Publikováno v: In Microelectronic Engineering 2002 63(4):391-403

Large-Field Ion-Optics for Projection and Proximity Printing and for Mask-Less Lithography (ML2)

Autor: Loeschner, H., Stengl, G., Buschbeck, H., Chalupka, A., Lammer, G., Platzgummer, E., Vonach, H., Jager, de, P.W.H., Kaesmaier, R., Ehrmann, A., Hirscher, S., Wolter, A., Dietzel, A.H., Berger, R., Grimm, H., Terris, B.D., Bruenger, W.H., Adam, D., Boehm, M., Eichhorn, H., Springer, R., Butschke, J., Letzkus, F., Ruchhoeft, P., Wolfe, J.C., Engelstad, R.L.

Publikováno v: Emerging Lithographic Technologies VI, Santa Clara, 2002, 595-606
STARTPAGE=595;ENDPAGE=606;TITLE=Emerging Lithographic Technologies VI, Santa Clara, 2002

Recent studies carried out with Infineon Technologies have shown the utility of Ion Projection Lithography (IPL) for the manufacturing of integrated circuits. In cooperation with IBM Storage Technology Division the patterning of magnetic films by res

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b05634122368f198bd303bb9a17cc43d
https://doi.org/10.1117/12.472336

Plasma source for ion and electron beam lithography

Autor: Lee, Y., Leung, K.N., Fallmann, W., Torkler, M., Bruenger, W.H.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od_______610::d4ead03ff5a0e80ed09d4f08d7d15d2d
https://publica.fraunhofer.de/handle/publica/193155

Resolution improvement of ion projector with a low energy spread multicusp ion source

Autor: Bruenger, W.H., Torkler, M., Leung, K.N., Lee, Y., Williams, M.D., Loeschner, H., Stengl, G., Fallmann, W., Paschke, F., Stangl, G., Rangelow, I.W., Hudek, P.

Publikováno v: Microelectronic Engineering; May 1999, Vol. 46 Issue: 1-4 p477-480, 4p