Zobrazeno 1 - 10
of 121
pro vyhledávání: '"Bruene, C."'
FeSn is a room-temperature antiferromagnet composed of alternating Fe3Sn kagome layers and honeycomb Sn layers. Its distinctive lattice allows the formation of linearly dispersing Dirac bands and topological flat bands in its electronic band structur
Externí odkaz:
http://arxiv.org/abs/2411.19130
We investigate the crystal properties of CdTe nanowires overgrown with HgTe. Scanning electron microscopy (SEM) and scanning transmission electron microscopy (STEM) confirm, that the growth results in a high ensemble uniformity and that the individua
Externí odkaz:
http://arxiv.org/abs/1812.01248
Autor:
Inhofer, A., Tchoumakov, S., Assaf, B. A., Fève, G., Berroir, J. M., Jouffrey, V., Carpentier, D., Goerbig, M., Plaçais, B., Bendias, K., Mahler, D. M., Bocquillon, E., Schlereth, R., Brüne, C., Buhmann, H., Molenkamp, L. W.
Publikováno v:
Phys. Rev. B 96, 195104 (2017)
It is well established that topological insulators sustain Dirac fermion surface states as a consequence of band inversion in the bulk. These states have a helical spin polarization and a linear dispersion with large Fermi velocity. In this article w
Externí odkaz:
http://arxiv.org/abs/1704.04045
Autor:
Kessel, M., Hajer, J., Karczewski, G., Schumacher, C., Brüne, C., Buhmann, H., Molenkamp, L. W.
Publikováno v:
Phys. Rev. Materials 1, 023401 (2017)
We present results on the growth of CdTe-HgTe core-shell nanowires, a realization of a quasi one-dimensional heterostructure of the topological insulator HgTe. The growth is a two step process consisting of the growth of single crystalline zinc blend
Externí odkaz:
http://arxiv.org/abs/1703.09106
Autor:
Calvo, M. R., de Juan, F., Ilan, R., Fox, E. J., Bestwick, A. J., Mühlbauer, M., Wang, J., Ames, C., Leubner, P., Brüne, C., Zhang, S. C., Buhmann, H., Molenkamp, L. W., Goldhaber-Gordon, D.
Publikováno v:
Phys. Rev. Lett. 119, 226401 (2017)
We study the electronic transport across an electrostatically-gated lateral junction in a HgTe quantum well, a canonical 2D topological insulator, with and without applied magnetic field. We control carrier density inside and outside a junction regio
Externí odkaz:
http://arxiv.org/abs/1702.08561
Autor:
Khouri, T., Bendias, M., Leubner, P., Brüne, C., Buhmann, H., Molenkamp, L. W., Zeitler, U., Hussey, N. E., Wiedmann, S.
Publikováno v:
Phys. Rev. B 93 (2016) 125308
We report on the observation of the quantum Hall effect at high temperatures in HgTe quantum wells with a finite band gap and a thickness below and above the critical thickness $d_\textnormal{c}$ that separates a conventional semiconductor from a two
Externí odkaz:
http://arxiv.org/abs/1605.03342
Autor:
Dziom, V., Shuvaev, A., Pimenov, A., Astakhov, G. V., Ames, C., Bendias, K., Böttcher, J., Tkachov, G., Hankiewicz, E. M., Brüne, C., Buhmann, H, Molenkamp, L. W.
Publikováno v:
Nat. Commun. 8, 15197 (2017)
The electrodynamics of topological insulators (TIs) is described by modified Maxwell's equations, which contain additional terms that couple an electric field to a magnetization and a magnetic field to a polarization of the medium, such that the coup
Externí odkaz:
http://arxiv.org/abs/1603.05482
Autor:
Orlita, M., Piot, B. A., Martinez, G., Kumar, N. K. Sampath, Faugeras, C., Potemski, M., Michel, C., Hankiewicz, E. M., Brauner, T., Drašar, Č., Schreyeck, S., Grauer, S., Brunner, K., Gould, C., Brüne, C., Molenkamp, L. W.
Publikováno v:
Phys. Rev. Lett. 114, 186401 (2015)
We report on magneto-optical studies of Bi2Se3, a representative member of the 3D topological insulator family. Its electronic states in bulk are shown to be well described by a simple Dirac-type Hamiltonian for massive particles with only two parame
Externí odkaz:
http://arxiv.org/abs/1504.02791
Autor:
Mühlbauer, M., Budewitz, A., Büttner, B., Tkachov, G., Hankiewicz, E. M., Brüne, C., Buhmann, H., Molenkamp, L. W.
Publikováno v:
Phys. Rev. Lett. 112, 146803, 2014
We study the weak antilocalization (WAL) effect in the magnetoresistance of narrow HgTe wires fabricated in quantum wells (QWs) with normal and inverted band ordering. Measurements at different gate voltages indicate that the WAL is only weakly affec
Externí odkaz:
http://arxiv.org/abs/1306.2796
Autor:
Schreyeck, S., Tarakina, N. V., Karczewski, G., Schumacher, C., Borzenko, T., Bruene, C., Buhmann, H., Gould, C., Brunner, K., Molenkamp, L. W.
Publikováno v:
Appl. Phys. Lett. 102, 041914 (2013)
Epitaxial layers of the topological insulator Bi2Se3 have been grown by molecular beam epitaxy on laterally lattice-matched InP(111)B substrates. High resolution X-ray diffraction shows a significant improvement of Bi2Se3 crystal quality compared to
Externí odkaz:
http://arxiv.org/abs/1302.3397