Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Bruce W. Porth"'
Autor:
Charles A. Whiting, Thai Doan, Jessie Rosenberg, Yves Martin, Natalie B. Feilchenfeld, Robert K. Leidy, Carol Reinholm, John J. Ellis-Monaghan, Fuad E. Doany, Tymon Barwicz, D. M. Gill, Wilfried Haensch, Sebastian Engelmann, Marwan H. Khater, Steven M. Shank, Ankur Agrawal, Mounir Meghelli, J. Ferrario, B.J. Offrein, Christian W. Baks, B. Cucci, Jeffrey C. Maling, Eric A. Joseph, Christa R. Willets, Jason S. Orcutt, S. Chilstedt, Edward W. Kiewra, Chi Xiong, Y. Ding, F. Baker, Jens Hofrichter, Frederick G. Anderson, Dinh Dang, Jonathan E. Proesel, Crystal M. Hedges, Frank R. Libsch, M. Nicewicz, Michael S. Gordon, Xiaowei Tian, Bruce W. Porth, K. McLean, W. M. J. Green, Wesley D. Sacher, Andreas D. Stricker, Folkert Horst
Publikováno v:
2015 IEEE International Electron Devices Meeting (IEDM).
A manufacturable platform of CMOS, RF and opto-electronic devices fully PDK enabled to demonstrate a 4×25 Gb/s reference design is presented. With self-aligned fiber attach, this technology enables low-cost O-band data-com transceivers. In addition,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4752de579ffe16728698630b20782bd
https://doi.org/10.1109/iedm.2015.7409768
https://doi.org/10.1109/iedm.2015.7409768
Publikováno v:
International Electron Devices Meeting 1991 [Technical Digest].
A new MOSFET gate-induced drain leakage (GIDL) mechanism is observed in narrow-width trench-isolated MOSFET devices. Electrical measurements and device simulation show that this mechanism occurs due to electric-field enhancement at the three-dimensio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::062b0c1db7f03da855ec96ce53f2954f
https://doi.org/10.1109/iedm.1991.235294
https://doi.org/10.1109/iedm.1991.235294