Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Bruce Odekirk"'
Autor:
Dennis Meyer, Xuning Zhang, Reenu Garg, Bruce Odekirk, Steve Chenetz, Ehab Tarmoom, Kevin Speer
Publikováno v:
2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::100b59f700530068dce6a8347d93d138
https://doi.org/10.1109/wipda56483.2022.9955309
https://doi.org/10.1109/wipda56483.2022.9955309
Autor:
Avinash Srikrishnan Kashyap, Dumitru Sdrulla, Yi Fan Jiang, Amaury Gendron-Hansen, Changsoo Hong, John May, Bruce Odekirk
Publikováno v:
Materials Science Forum. 1004:822-829
In this paper, we present a new family of 3300 V silicon carbide (SiC) Schottky barrier diodes (SBDs) and power MOSFETs. The main design requirements are discussed with an emphasis on the design rules to improve the long-term reliability. Basic stati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57a1a57fbc7d53364ff05c8f04d4ed31
https://doi.org/10.4028/www.scientific.net/msf.1004.822
https://doi.org/10.4028/www.scientific.net/msf.1004.822
Autor:
Robert Stahlbush, Nadeemullah Mahadik, Peter Bonanno, Jake Soto, Bruce Odekirk, Woongje Sung, Anant Agarwal
Publikováno v:
2022 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::520cce5ee2d7cd5bb78bb6ba3b8615cd
https://doi.org/10.1109/irps48227.2022.9764473
https://doi.org/10.1109/irps48227.2022.9764473
Autor:
Sami A. El Hageali, Harvey Guthrey, Steven Johnston, Jake Soto, Bruce Odekirk, Brian P. Gorman, Mowafak Al-Jassim
Publikováno v:
Journal of Applied Physics. 131:185705
The development of metal oxide semiconductor field effect transistors (MOSFETs) utilizing epitaxially grown 4H-SiC has accelerated in recent years due to their favorable properties, including a high breakdown field, high saturated electron drift velo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f0a3b2236ed589040830b971ce4bacc
https://doi.org/10.1063/5.0088313
https://doi.org/10.1063/5.0088313
Autor:
Amaury Gendron-Hansen, Avinash Srikrishnan Kashyap, Dumitru Sdrulla, Linda Starr, Bruce Odekirk
Publikováno v:
Materials Science Forum. 924:585-588
A state-of-the art family of 1200 V junction barrier Schottky (JBS) diodes was developed. These devices are highly competitive in switching applications thanks to low specific series resistance (1.8 mΩ.cm2 at current rating) and low capacitive charg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7d6cc299975193d46f45c9cf3f57be9
https://doi.org/10.4028/www.scientific.net/msf.924.585
https://doi.org/10.4028/www.scientific.net/msf.924.585
Autor:
Bruce Odekirk, Yi Fan Jiang, Avinash Srikrishnan Kashyap, Dumitru Sdrulla, Amaury Gendron-Hansen, Changsoo Hong, John May, Dennis Meyer
Publikováno v:
2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).
A leading-edge generation of 700 V SiC MOSFETs is benchmarked against commercial silicon (Si) super-junction (SJ) MOSFETs. We report a specific R DS, ON of 3.1 m Ω. cm2, three times lower than for state-of-the-art Si SJ MOSFETs. For the same functio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00992b0980627feab57c944f75d5eee3
https://doi.org/10.1109/wipda46397.2019.8998881
https://doi.org/10.1109/wipda46397.2019.8998881
Autor:
Amaury Gendron-Hansen, Bruce Odekirk, William Brower, Laird Thornhill, Dumitru Sdrulla, Avinash Srikrishnan Kashyap
Publikováno v:
2018 IEEE Energy Conversion Congress and Exposition (ECCE).
A test procedure for repetitive unclamped inductive switching (R-UIS) is presented and the results are reported for state-of-the-art 4H-SiC Schottky barrier diodes (SBDs) and MOSFETs. The energies at failure are 8.3, 8.9, and 10.3 J/cm2 for SBD parts
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e0029a2f36f44cd71fe397c5acb876b
https://doi.org/10.1109/ecce.2018.8557909
https://doi.org/10.1109/ecce.2018.8557909
Publikováno v:
2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).
SiC power semiconductors typically have large margins in their breakdown voltage to account for epitaxy variation. The proposed method enables the optimization of over-design in the drift region and the performance of the edge termination for high vo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f59e710d25459b1a472da5ad0efdbf18
https://doi.org/10.1109/wipda.2017.8170578
https://doi.org/10.1109/wipda.2017.8170578
Autor:
Amaury Gendron-Hansen, Ed Maxwell, Bruce Odekirk, Faheem Faheem, In-Hwan Ji, Avinash Srikrishnan Kashyap, Dumitru Sdrulla, Changsoo Hong, Mingyu Lee
Publikováno v:
2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).
A novel 1200 V, 80 mΩ 4-H SiC power MOSFET with a shallow step p-body has been proposed for applications with highly rugged requirements. The innovative p-body design mitigates the problems arising due to the electric-field concentration at the corn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84372cefee0f1bf412671c0bfd24c720
https://doi.org/10.23919/ispsd.2017.7988995
https://doi.org/10.23919/ispsd.2017.7988995
Autor:
Ed Maxwell, Francis K. Chai, Mike Mallinger, Mar Caballero, Dumitru Sdrulla, Bruce Odekirk, Terri Fields
Publikováno v:
2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.
A Static Induction Transistor (SIT) technology capable of delivering output power over 2200W at VDD of 125V in UHF band of 406MHz-450MHz is presented. The transistor technology is built on 3” 4H-SiC epitaxial wafers. L-band performance is presented
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c09d09e7d9da67991c7f8415aaf3e32
https://doi.org/10.1109/ispsd.2011.5890850
https://doi.org/10.1109/ispsd.2011.5890850