Výsledky vyhledávání - "Bruce J. Tufts"

Distinguishing between buried semiconductor/metal contacts and hybrid semiconductor/metal/liquid contacts at n-gallium arsenide/potassium hydroxide-selenium (Se-/2-)(aq) junctions

Autor: Ming X. Tan, Nathan S. Lewis, Ashish Bansal, Bruce J. Tufts

Publikováno v: The Journal of Physical Chemistry. 97:7309-7315

The current-voltage properties of n-GaAs photoanodes have been evaluated in KOH-Se[sup [minus]]/2[minus]/(aq), CH[sub 3]CN-Fe[sup +]/0, and CH[sub 3]CN-MV[sup 2+]/+ solutions. Chemisorption of transition-metal ions (Rh[sup III], Co[sup III], Ru[sup I

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d4f18bd3fba97341ea8c4f0d4d3ce81f
https://doi.org/10.1021/j100130a031

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ChemInform Abstract: Chemical Modification of n-GaAs Photoanodes with Group VIIIB Metal Ions: Stability in Contact with 1.0 M KOH(aq)-0.10 M K2Se(aq) Solutions and I-V Properties in Contact with 1.0 M KOH(aq)-0.3 M K2Te( aq) Electrolytes

Autor: Nathan S. Lewis, Charlotte Newcomb, Michael J. Sailor, Sharon R. Lunt, Ming X. Tan, Amit Kumar, Bruce J. Tufts

Publikováno v: ChemInform. 23

A quantitative study has been performed on the stability of GaAs surfaces to photoanodic corrosion in contact with the 1.0 M KOH(aq)-0.10 M K[sub 2]Se(aq)-0.01 M K[sub 2]Se[sub 2](aq) electrolyte. In this electrolyte, chemically etched n-type GaAs el

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::243272948ceee4ee32046b40ed5617bc
https://doi.org/10.1002/chin.199208020

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X-ray photoelectron spectroscopic studies of interfacial chemistry at n-type silicon/liquid junctions

Autor: Nathan S. Lewis, Ashish Bansal, Bruce J. Tufts, Amit Kumar

Publikováno v: The Journal of Physical Chemistry. 96:4581-4592

The surface chemistry of n-type Si electrodes that had been etched, exposed to electrolyte, and electrochemically cycled has been probed using high-resolution X-ray photoelectron spectroscopy (XPS). n-Si surfaces etched in hydrofluoric acid-ethanol s

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e333861f4c6302c3208f188fd7fc3cdf
https://doi.org/10.1021/j100190a082

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Chemical modification of n-gallium arsenide photoanodes with group VIIIB metal ions: stability in contact with 1.0 M potassium hydroxide(aq)-0.10 M dipotassium selenide(aq) solutions and I-V properties in contact with 1.0 M potassium hydroxide(aq)-0.3 M dipotassium telluride(aq) electrolytes

Autor: Ming X. Tan, Sharon R. Lunt, Amit Kumar, Charlotte Newcomb, Nathan S. Lewis, Michael J. Sailor, Bruce J. Tufts

Publikováno v: The Journal of Physical Chemistry. 95:10133-10142

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d3429e44dc43cc5ef89e99b20931cb70
https://doi.org/10.1021/j100177a092

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Trends in the open circuit voltage of semiconductor/liquid interfaces: studies of n-aluminum gallium arsenide/acetonitrile-ferrocene+/0 and n-aluminum gallium arsenide/potassium hydroxide-selenide-/2- (aq) junctions

Autor: Louis G. Casagrande, Nathan S. Lewis, Bruce J. Tufts

Publikováno v: The Journal of Physical Chemistry. 95:1373-1380

Trends in open-circuit voltage (V{sub oc}), short-circuit current density (J{sub sc}), and energy conversion efficiency have been determined for the n-type Al{sub x}Ga{sub 1{minus}x}As series of photoelectrodes (x = 0.0, 0.09, 0.16, 0.24, 0.31) in co

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ead46b5822b56f10c6bd941c4d0047e5
https://doi.org/10.1021/j100156a063

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XPS and EXAFS studies of the reactions of cobalt(III) ammine complexes with gallium arsenide surfaces

Autor: Ian L. Abrahams, Sharon R. Lunt, Gordon M. Miskelly, A. Lawrence Roe, Nathan S. Lewis, Michael J. Sailor, Catherine E. Caley, Patrick G. Santangelo, Bruce J. Tufts, Keith O. Hodgson

Publikováno v: Journal of the American Chemical Society. 112:5123-5136

The chemisorption of Co(II) and Co(III) complexes onto GaAs surfaces has been investigated by x-ray photoelectron spectroscopy (XPS), x-ray absorption spectroscopy, and radiotracer techniques. XPS of (100)-oriented n-GaAs single crystals exposed to a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5a8257c9ba06a9243758500d85d4c4d7
https://doi.org/10.1021/ja00169a021

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Fabrication of minority‐carrier‐limitedn‐Si/insulator/metal diodes

Autor: Mary L. Rosenbluth, Delwyn L. Gilmore, Mark D. Rosenblum, Bruce J. Tufts, Nathan S. Lewis, Amit Kumar

Publikováno v: Applied Physics Letters. 56:1919-1921

A photoelectrochemical anodization technique has been used to fabricate n-Si/insulator/metal (MIS) diodes with improved electrical properties. MIS structures fabricated with Au have provided the first experimental observation of a solid-state n-Si su

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c56afda48b448cfaf10d507d578cdcb2
https://doi.org/10.1063/1.103044

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Correlations between the interfacial chemistry and current-voltage behavior of n-GaAs/liquid junctions

Autor: Louis G. Casagrande, Nathan S. Lewis, Frank J. Grunthaner, Bruce J. Tufts

Correlations between the surface chemistry of etched, (100) oriented n-GaAs electrodes and their subsequent photoelectrochemical behavior have been probed by high-resolution x-ray photoelectron spectroscopy. GaAs photoanodes were chemically treated t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1d051f95aa846b0ac71e57c6c172c0f9
https://resolver.caltech.edu/CaltechAUTHORS:TUFapl90

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