Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Bruce B. Claflin"'
Publikováno v:
International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors 2022.
Publikováno v:
ECS Transactions. 19:87-92
The impact of adsorbed gases on graphene layers grown by SiC sublimation is investigated by temperature-dependent Hall-effect and Raman spectroscopy. For samples stored in ambient laboratory conditions, irreversible changes are seen in sheet resistan
Deep centers in semi‐insulating Fe‐doped native GaN substrates grown by hydride vapour phase epitaxy
Autor:
Said Elhamri, H. E. Smith, Z-Q. Fang, Edward A. Preble, Drew Hanser, Keith R. Evans, Bruce B. Claflin, William C. Mitchel, David C. Look
Publikováno v:
physica status solidi c. 5:1508-1511
Electrical properties, Fe concentration, and deep centers in semi-insulating Fe-doped GaN substrates grown by hydride vapor phase epitaxy (HVPE) were characterized by temperature-dependent Hall-effect measurements, secondary ion mass spectroscopy, an
Publikováno v:
Journal of Electronic Materials. 36:307-311
Many point-defect–related centers have been investigated in electron-irradiated 6H-SiC by deep-level transient spectroscopy (DLTS). Most of them are believed to be related to vacancies. Our DLTS studies on deep centers produced by electron-irradiat
Publikováno v:
Journal of Electronic Materials. 36:442-445
The impact of light and controlled gas ambient on the electrical characteristics of ZnO:P grown by pulsed laser deposition (PLD) is investigated with temperature-dependent Hall-effect and photo-Hall-effect using above-bandgap light. Exposure to blue/
Autor:
T. E. Anderson, David C. Look, William C. Mitchel, J. Chen, Bruce B. Claflin, L. Polenta, Zhaoqiang Fang
Publikováno v:
Materials Science Forum. :509-512
Thermally stimulated current spectroscopy (TSC) has been applied to characterize deep traps in high-purity semi-insulating 6H-SiC substrates. By using above bandgap to sub-bandgap light for illumination at 83 K and different applied biases, at least
Autor:
Puneet Masaun, Bruce B. Claflin, B. H. Hoerman, David C. Look, Catherine E. Rice, Shangzu Sun, Gary S. Tompa
Publikováno v:
Journal of Electronic Materials. 35:766-770
Zinc oxide is attracting growing interest for potential applications in electronics, optoelectronics, photonics, and chemical and biochemical sensing, among other applications. We report herein our efforts in the growth and characterization of p- and
Publikováno v:
Journal of Crystal Growth. 287:16-22
Research activity on ZnO has increased over the past few years, with particular interest in potential electronic and optical device applications such as transparent field-effect transistors (FETs) and light-emitting diodes (LEDs). High-quality bulk a
Publikováno v:
Journal of Crystal Growth. 281:143-150
The first GaN was grown by hydride vapor phase epitaxy (HVPE) more than 30 years ago, and now thick, large-area HVPE layers are being proposed as substrates for GaN devices. Temperature-dependent Hall-effect, photoluminescence (PL), secondary ion mas
Publikováno v:
physica status solidi (c). 2:2757-2760
Semi-insulating GaN samples, grown by ammonia-based molecular beam epitaxy and doped with carbon, were investigated by thermally stimulated current spectroscopy and photoluminescence at 4.2 K. In addition to a dominant trap at 0.90 eV, thought to be