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pro vyhledávání: '"Bruce A. Joyce"'
Autor:
Bruce A. Joyce
Publikováno v:
The Handbook of Surface Imaging and Visualization ISBN: 9780367811815
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e4180c362feb6710fd87e4aa679b895
https://doi.org/10.1201/9780367811815-54
https://doi.org/10.1201/9780367811815-54
Autor:
Bruce A. Joyce
Publikováno v:
Biographical Memoirs of Fellows of the Royal Society. 62:447-459
Ronald Charles (Ron) Newman was one of the most versatile semiconductor physicists of his generation and is distinguished for his work in several different areas, most notably epitaxial growth and the behaviour of impurities and dopants in a range of
Autor:
Bruce A. Joyce, Michael J. Stowell
Publikováno v:
Biographical Memoirs of Fellows of the Royal Society. 56:317-340
Donald William (Don) Pashley was one of the most innovative materials scientists of his generation. He was distinguished for his electron diffraction and transmission electron microscope studies of epitaxial thin films, especially for in situ investi
Autor:
Bruce A. Joyce
Publikováno v:
Angewandte Chemie. 101:1124-1129
This Advanced Material provides an introduction to the growth by molecular beam epitaxy (MBE) of semiconductor structures which have dimensions of the same order as interatomic distances in solids. The basic process technology is first described, fol
Autor:
Georg Wahl, Paul B. Davies, Rointan F. Bunshah, Bruce A. Joyce, Colin D. Bain, Gerhard Wegner, Markus Remmers, Francis C. Walsh, Konrad Hieber, Jan-Eric Sundgren, Peter K. Bachmann, Shintaro Miyazawa, Alfred Thelen, Heiner Strathmann, Karen J. Edler
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::465a77897a3f44c9976b6e1cbb2902bc
https://doi.org/10.1002/14356007.a26_681.pub2
https://doi.org/10.1002/14356007.a26_681.pub2
Publikováno v:
Journal of Crystal Growth. 186:21-26
This paper reports on a comparison of the relative extent of desorption of indium atoms during growth by molecular-beam epitaxy of (In,Ga)As films between GaAs confinement layers on GaAs substrates of all four low index orientations: (1 0 0), (1 1 0)
Autor:
Michael Pepper, Bruce A. Joyce, J. M. Fernández, P.V. Kelly, Alec N. Broers, Gabriel M. Crean, Joseph M. Ryan, Douglas J. Paul
Publikováno v:
Solid-State Electronics. 41:1509-1513
Modulation-doped two dimensional electron gases (2DEGs) grown on Si 0.7 Ge 0.3 virtual substrates were investigated. Low temperature measurements were used to characterise the uniformity of the wafers and annealing studies demonstrated that high anne
Publikováno v:
Advanced Materials for Optics and Electronics. 7:215-224
Autor:
J. Zhang, Pavel Šmilauer, Dimitri D. Vvedensky, Bruce A. Joyce, Andrew Zangwill, Kazuki Mizushima
Publikováno v:
Journal of Crystal Growth. :509-513
The effects of hydrogen on the growth kinetics of Si(0 0 1) during gas-source molecular-beam epitaxy from disilane are investigated with kinetic Monte Carlo simulations. The growth model includes the surface decomposition of disilane, which requires
Publikováno v:
Surface Science. 374:397-405
Reflection high-energy electron diffraction (RHEED) intensity oscillations have been used to obtain the arsenic incorporation coefficients for the homoepitaxial growth of GaAs on the (001) surface at different substrate temperatures. The incorporatio