Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Brown, Raphael"'
Autor:
Brown, Raphael
Power-switching devices require low on-state conduction losses, high-switching speed, high thermal stability, and high input impedance. Using gallium nitride (GaN) based field-effect transistors, these properties for switching devices can be satisfie
Externí odkaz:
http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.659400
Autor:
Brown, Raphael P.
The Marine Corps trains its aviation units according to a Training and Readiness (T&R) Program that quantifies combat readiness based on completion of prescribed sets of training 'events' (e.g., aircraft training flights, tactical control of aircraft
Externí odkaz:
http://hdl.handle.net/10945/35115
Autor:
Brown, Raphael, Macfarlane, Douglas, Al-Khalidi, Abdullah, Li, Xu, Ternent, Gary, Zhou, Haiping, Thayne, Iain, Wasige, Edward
A new high-performance normally-off gallium nitride (GaN)-based metal-oxide-semiconductor high electron mobility transistor that employs an ultrathin subcritical 3 nm thick aluminium gallium nitride (Al0.25Ga0.75N) barrier layer and relies on an indu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::dd580628fc5d83fdd2625272af765d57
https://eprints.gla.ac.uk/94794/1/94794.pdf
https://eprints.gla.ac.uk/94794/1/94794.pdf
Autor:
Brown, Raphael
Publikováno v:
The Americas, 1950 Jan 01. 6(3), 369-373.
Externí odkaz:
https://www.jstor.org/stable/977912
Autor:
Wang, Jue, Ofiare, Afesomeh, Alharbi, Khalid, Brown, Raphael, Khalid, Ata, Cumming, David, Wasige, Edward
Publikováno v:
2015 11th Conference on Ph.D. Research in Microelectronics & Electronics (PRIME); 2015, p262-265, 4p
Autor:
Brown, Raphael, Al-Khalidi, Abdullah, Macfarlane, Douglas, Taking, Sanna, Ternent, Gary, Thayne, Iain, Wasige, Edward
Publikováno v:
Physica Status Solidi (C); Apr2014, Vol. 11 Issue 3/4, p844-847, 4p