Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Brook Hosse"'
Autor:
Pinal Patel, Ramakrishna Vetury, Rohan Holden, Michael A. McLain, Shawn R. Gibb, Mark D. Boomgarden, Brook Hosse, Jeffrey B. Shealy, Alexander Y. Feldman, Michael P. Lewis, Michael D. Hodge
Publikováno v:
2017 IEEE MTT-S International Microwave Symposium (IMS).
Bulk acoustic wave (BAW) filters operating at center frequency of 3.7GHz, comprising of BAW resonators utilizing single crystal aluminum nitride (AlN) piezoelectric films epitaxially grown on silicon carbide (SiC) substrates, are reported. Metal-orga
Autor:
P. M. Garber, C. Greer, M. Isenhour, P. Wilkerson, David Grider, M. J. Poulton, V. Steel, R. Sadler, B. Zaroff, J. Dick, B. Sousa, Joseph Smart, J. Bonaker, M. Hamilton, T.W. Mercier, Brook Hosse, Jeffrey B. Shealy, D. Halchin, Shawn R. Gibb
Publikováno v:
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu.
This paper focuses on the development of 100 mm gallium nitride HEMT technology at RF Micro Devices and the utilization of GaN transistors for commercial applications such as power amplifiers, power switches and low-noise power oscillators.
Autor:
D. S. Green, Brook Hosse, Jeffrey B. Shealy, Jeffrey D. Brown, Johnathan McKenna, Martin Young, Shawn R. Gibb, M. J. Poulton, Kevin Gratzer, Sangmin Lee, Yinbao Yang, Ramakrishna Vetury, Thomas Mercier
Publikováno v:
ECS Meeting Abstracts. :1545-1545
AlGaN/GaN High Electron Mobility Transistors (HEMTs) are receiving considerable attention as a technology that is well suited for high power, high efficiency, radio frequency(RF) and microwave applications. The demonstration of attractive performance