Zobrazeno 1 - 10
of 54
pro vyhledávání: '"Bronislovas Čechavičius"'
Autor:
Tadas Paulauskas, Vaidas Pačebutas, Renata Butkutė, Bronislovas Čechavičius, Arnas Naujokaitis, Mindaugas Kamarauskas, Martynas Skapas, Jan Devenson, Mária Čaplovičová, Viliam Vretenár, Xiaoyan Li, Mathieu Kociak, Arūnas Krotkus
Publikováno v:
Nanoscale Research Letters, Vol 15, Iss 1, Pp 1-12 (2020)
Abstract The distribution of alloyed atoms in semiconductors often deviates from a random distribution which can have significant effects on the properties of the materials. In this study, scanning transmission electron microscopy techniques are empl
Externí odkaz:
https://doaj.org/article/58e07f5625c24c46b660ea6220f7192f
Autor:
Tadas Paulauskas, Vaidas Pačebutas, Andrejus Geižutis, Sandra Stanionytė, Evelina Dudutienė, Martynas Skapas, Arnas Naujokaitis, Viktorija Strazdienė, Bronislovas Čechavičius, Mária Čaplovičová, Viliam Vretenár, Rafał Jakieła, Arūnas Krotkus
Publikováno v:
Scientific Reports, Vol 10, Iss 1, Pp 1-12 (2020)
Abstract The dilute bismide alloy GaAs1-x Bi x has drawn significant attention from researchers interested in its fundamental properties and the potential for infrared optoelectronics applications. To extend the study of bismides, molecular-beam hete
Externí odkaz:
https://doaj.org/article/420209a231dc4d259a52f54ccf27e415
Autor:
Simona Armalytė, Justinas Glemža, Vytautas Jonkus, Sandra Pralgauskaitė, Jonas Matukas, Simona Pūkienė, Andrea Zelioli, Evelina Dudutienė, Arnas Naujokaitis, Andrius Bičiūnas, Bronislovas Čechavičius, Renata Butkutė
Publikováno v:
Sensors, Vol 23, Iss 4, p 2282 (2023)
Fabry–Perot laser diodes based on (Al, Ga)As and Ga(As, Bi) with single or multiple parabolic or rectangular-shaped quantum wells (QWs) emitting at the 780–1100 nm spectral range were fabricated and investigated for optimization of the laser QW d
Externí odkaz:
https://doaj.org/article/38f3c98179fc453ca959d0c2a2279eb8
Autor:
Renata Butkutė, Gediminas Niaura, Evelina Pozingytė, Bronislovas Čechavičius, Algirdas Selskis, Martynas Skapas, Vytautas Karpus, Arūnas Krotkus
Publikováno v:
Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-7 (2017)
Abstract Formation of bismuth nanocrystals in GaAsBi layers grown by molecular beam epitaxy at 330 °C substrate temperature and post-growth annealed at 750 °C is reported. Superlattices containing alternating 10 nm-thick GaAsBi and AlAs layers were
Externí odkaz:
https://doaj.org/article/b9512d193a7f4f91b00b12eb67257a6f
Autor:
Justinas Glemža, Vilius Palenskis, Andrejus Geižutis, Bronislovas Čechavičius, Renata Butkutė, Sandra Pralgauskaitė, Jonas Matukas
Publikováno v:
Materials, Vol 12, Iss 4, p 673 (2019)
GaAsBi is a suitable and very attractive material system to be used as an active layer in laser diodes (LDs). To understand the performance and the reliability of such devices and also for further laser diode improvements, the origin of noise sources
Externí odkaz:
https://doaj.org/article/9bc22b4bc8fd4811b7397b3730ec2d19
Autor:
Vilius Palenskis, Linas Minkevičius, Jonas Matukas, Domas Jokubauskis, Sandra Pralgauskaitė, Dalius Seliuta, Bronislovas Čechavičius, Renata Butkutė, Gintaras Valušis
Publikováno v:
Sensors, Vol 18, Iss 11, p 3760 (2018)
InGaAs-based bow-tie diodes for the terahertz (THz) range are found to be well suited for development of compact THz imaging systems. To further optimize design for sensitive and broadband THz detection, one of the major challenges remains: to unders
Externí odkaz:
https://doaj.org/article/9d800c6fe40649bb8efd61e6c6005af3
Autor:
Simona Pūkienė, Algirdas Jasinskas, Andrea Zelioli, Sandra Stanionytė, Virginijus Bukauskas, Bronislovas Čechavičius, Evelina Dudutienė, Renata Butkutė
Publikováno v:
Lithuanian Journal of Physics. 62
A series of 100 nm-thick pseudomorphic GaAsBi layers with the Bi content varying from 0.97 to 11.2% have been grown by molecular beam epitaxy (MBE) on the semi-insulating GaAs(100) substrates buffered with an ultra-thin up to 20 nm thick GaAs layer.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc98c7104fc9389014f9bcd4696ac3eb
https://doi.org/10.3952/physics.v62i2.4742
https://doi.org/10.3952/physics.v62i2.4742
Autor:
Algirdas Jasinskas, Monika Jokubauskaitė, Gintaras Valušis, Bronislovas Čechavičius, R. Nedzinskas, Virginijus Bukauskas, Evelina Dudutienė, Renata Butkutė, A. Bičiūnas
Publikováno v:
Lithuanian Journal of Physics. 61
A set of single quantum well (SQW) samples of GaAs1-xBix with x ~ 0.1 and p-doped GaAs barriers grown by molecular beam epitaxy was investigated by the temperature-dependent photoluminescence (PL) spectroscopy. Those GaAsBi SQW structures showed a hi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ad1a76e69da96071a5eda7beae3bddd
https://doi.org/10.3952/physics.v61i2.4442
https://doi.org/10.3952/physics.v61i2.4442
Autor:
Tadas Paulauskas, Bronislovas Čechavičius, Vytautas Karpus, Lukas Jočionis, Saulius Tumėnas, Jan Devenson, Vaidas Pačebutas, Sandra Stanionytė, Viktorija Strazdienė, Andrejus Geižutis, Mária Čaplovičová, Viliam Vretenár, Michael Walls, Arūnas Krotkus
The GaAs1–xBix semiconductor alloy allows one to achieve large bandgap reduction and enhanced spin–orbit splitting energy at dilute Bi quantities. The bismide is currently being developed for near- to mid-infrared lasers, multi-junction solar cel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::e2ed86cc1bf7515cb9c87fa89c0066b9
https://hal.archives-ouvertes.fr/hal-03044054
https://hal.archives-ouvertes.fr/hal-03044054
Autor:
Arūnas Krotkus, Martynas Skapas, Evelina Dudutienė, Rafal Jakiela, Sandra Stanionytė, Viktorija Strazdienė, Arnas Naujokaitis, Vaidas Pačebutas, Viliam Vretenár, Mária Čaplovičová, A. Geižutis, Tadas Paulauskas, Bronislovas Čechavičius
Publikováno v:
Scientific Reports, Vol 10, Iss 1, Pp 1-12 (2020)
Scientific Reports
Scientific Reports
The dilute bismide alloy GaAs1-xBix has drawn significant attention from researchers interested in its fundamental properties and the potential for infrared optoelectronics applications. To extend the study of bismides, molecular-beam heteroepitaxy o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3f67205e33b7eb867426e75c5b163a85
https://doi.org/10.1038/s41598-020-58812-y
https://doi.org/10.1038/s41598-020-58812-y