Mapping of the localized interface and surface states of InGaAs lattice matched to Fe-doped InP by infrared spectroscopy.

Autor: Peng, L. H., Broekaert, T. P. E., Choi, W. Y., Bennett, B. R., Smet, J. H., Diadiuk, V., Groves, S. H., Palmateer, S. C., Pan, N., Fonstad, C. G.

Publikováno v: Journal of Applied Physics; 10/15/1992, Vol. 72 Issue 8, p3664, 6p, 1 Diagram, 1 Chart, 3 Graphs

50Gb/s 3.3V logic ICs in InP-HBT technology.

Autor: van der Wagt, P., Broekaert, T., Yinger, S., Zheng, S., Srivastava, N., Rogers, J., Sanders, J., Thiagarajah, R., Coccioli, R., Arnold, E., Nary, K.

Publikováno v: 2004 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.04CH37525); 2004, p326-329, 4p

Resonant tunneling circuit technology: has it arrived?

Autor: Seabaugh, A., Brar, B., Broekaert, T., Frazier, G., Morris, F., van der Wagt, P., Beam, E.

Publikováno v: GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 19th Annual Technical Digest 1997; 1997, p119-122, 4p

InP-HBT optoelectronic integrated circuits for photonic analog-to-digital conversion.

Autor: Broekaert, T., Ng, W., Jensen, J., Yap, D., Walden, R.

Publikováno v: GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuits Symposium. 22nd Annual Technical Digest 2000 (Cat. No.00CH37084); 2000, p15-17, 3p

Functional InP/InGaAs lateral double barrier heterostructure resonant tunneling diodes by using etch and regrowth.

Autor: Broekaert, T. P. E., Randall, J. N., Beam III, E. A., Jovanovic, D., Seabaugh, A. C., Smith, B. D.

Publikováno v: Applied Physics Letters; 9/23/1996, Vol. 69 Issue 13, p1918, 3p, 1 Diagram, 4 Graphs