Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Britt-Marie Meiners"'
Characterisation of intrinsic silicon oxide absorber layers for use in silicon thin film solar cells
Publikováno v:
physica status solidi (a). 212:2068-2073
The use of a wide bandgap absorber layer in the top cell of a multi-junction silicon thin film solar cell is necessary to achieve a high-conversion efficiency. A higher bandgap of the absorber results in a higher open-circuit voltage (Voc) of the cel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df02aec0b79afee326a35e06e648216b
https://doi.org/10.1002/pssa.201532208
https://doi.org/10.1002/pssa.201532208
Publikováno v:
physica status solidi (a). 212:1817-1822
The degradation of thin passivation films on silicon wafers after sputtering deposition with different process parameters has been investigated. Thin intrinsic amorphous silicon passivation films with different thicknesses and with different doped to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4584feba8f292e24475f4df987a6b39a
https://doi.org/10.1002/pssa.201431923
https://doi.org/10.1002/pssa.201431923