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pro vyhledávání: '"Brishbhan Panwar"'
Autor:
B. Brishbhan Panwar, G. Khanduri
Publikováno v:
Proceedings 2007 IEEE SoutheastCon.
This work presents an approach to optimize the base doping and Ge-dose inside the base of SiGe HBTs using the fixed point iterative methodology and includes the effect of minority carrier velocity saturation on total base transit time for SiGe HBTs.
Autor:
Khanduri, G., Brishbhan Panwar, B.
Publikováno v:
Proceedings 2007 IEEE SoutheastCon; 2007, p579-583, 5p
Autor:
Gagan Khanduri, Brishbhan Panwar
Publikováno v:
Semiconductor Science & Technology; Apr2006, Vol. 21 Issue 4, p486-493, 8p
Autor:
Gagan Khanduri, Brishbhan Panwar
Publikováno v:
Journal of Semiconductors; Feb2015, Vol. 36 Issue 2, p1-1, 1p