Zobrazeno 1 - 10
of 139
pro vyhledávání: '"Brinda Bhowmick"'
Autor:
Basab Das, Brinda Bhowmick
Publikováno v:
Silicon. 15:2359-2369
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::315e1faa10f67c6fd48ab637dc3a8cf0
https://doi.org/10.1007/s12633-022-02167-8
https://doi.org/10.1007/s12633-022-02167-8
Autor:
Puja Ghosh, Brinda Bhowmick
Publikováno v:
Journal of Computational Electronics. 21:1416-1424
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f47bed10e3e9664cbd65a76fc3c644e6
https://doi.org/10.1007/s10825-022-01935-4
https://doi.org/10.1007/s10825-022-01935-4
Autor:
Prashanth Kumar, Papanasam Esakki, Lucky Agarwal, null PeddaKrishna, Sumit Kale, Brinda Bhowmick
Publikováno v:
Silicon. 15:25-35
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb7788360be70c7b80d78bdc7234b80a
https://doi.org/10.1007/s12633-022-01994-z
https://doi.org/10.1007/s12633-022-01994-z
Publikováno v:
Journal of Materials Science: Materials in Electronics. 33:10323-10334
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddf81c761ad10e19c9f2102390938527
https://doi.org/10.1007/s10854-022-08020-3
https://doi.org/10.1007/s10854-022-08020-3
Autor:
Brinda Bhowmick, K. Vanlalawmpuia
Publikováno v:
IEEE Sensors Journal. 22:939-947
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4f533c668a5de4e4d5d34d5bc25465e
https://doi.org/10.1109/jsen.2021.3128473
https://doi.org/10.1109/jsen.2021.3128473
Publikováno v:
Integrated Ferroelectrics. 221:168-179
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e20ffe70be59b1b2b5eef3c835ed08d
https://doi.org/10.1080/10584587.2021.1965842
https://doi.org/10.1080/10584587.2021.1965842
Autor:
Brinda Bhowmick, K. Vanlalawmpuia
Publikováno v:
Silicon. 14:7517-7529
In this article, using a 3D Technology computer aided design (TCAD) simulator, a systematic investigation on the effects of temperature variations in the range of 200–400 K on various parameters of a delta doped heterojunction vertical tunnel FET (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::935f7df1a2af09c240eb7062a8ebe25b
https://doi.org/10.1007/s12633-021-01504-7
https://doi.org/10.1007/s12633-021-01504-7
Autor:
Sirisha Meriga, Brinda Bhowmick
Publikováno v:
Applied Physics A. 129
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20d70660ae0604d13c05c455b69ed56b
https://doi.org/10.1007/s00339-023-06394-7
https://doi.org/10.1007/s00339-023-06394-7
Publikováno v:
IETE Journal of Research. :1-9
FinFET provide themselves as a strong candidate for low-power applications. However, the enactment of a device depends upon the precision of fabrication process. The ion implantation technique of s...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f302a1b51f107c726fc99e96fef40270
https://doi.org/10.1080/03772063.2021.1973915
https://doi.org/10.1080/03772063.2021.1973915