Zobrazeno 1 - 10
of 194
pro vyhledávání: '"Brij M. Arora"'
Publikováno v:
Journal of Russian Laser Research. 41:552-562
Thin film of oriented crystalline intrinsic polysilicon films were grown on alkali-free borosilicate glass substrate using hot-wire chemical-vapor-deposition (HWCVD) technique. A layer as a source of phosphorus dopant on top of intrinsic polysilicon
Publikováno v:
2021 IEEE 48th Photovoltaic Specialists Conference (PVSC).
Potential Induced Degradation(PID) is an important field degradation mode that can cause warranty claims. Quantum Efficiency (QE) of the cells inside modules degraded by PID needs to be known in order to reduce the uncertainty in the flash I-V measur
Autor:
Brij M. Arora, Juzer Vasi, Hemant Kumar Singh, K. L. Narasimhan, Rajiv Dubey, Sonali Bhaduri, Sachin Zachariah, Chetan Singh Solanki, Narendra Shiradkar, Anil Kottantharayil, Shashwata Chattopadhyay
Publikováno v:
IEEE Journal of Photovoltaics. 8:1800-1808
Degradation in electrical performance of photovoltaic (PV) modules is related to the degradation of the solar cells and laminate materials in the modules, which often shows up as hot spots in infrared (IR) thermography. The analysis of the IR data of
Publikováno v:
American Journal of Physics. 86:787-796
Catering to a large undergraduate laboratory class requires the experiments to be robust, low maintenance, and easy to set up with low cost test equipment at the disposal of most university laboratories. Most introductory undergraduate semiconductor
Autor:
Yogeswara Rao Golive, Narendra Shiradkar, K Naga Bhavya Jyothi, Brij M. Arora, K. L. Narasimhan, Deepanshu Koshta
Publikováno v:
2020 47th IEEE Photovoltaic Specialists Conference (PVSC).
Establishing short circuit condition for a cell in a module is an essential prerequisite for measuring the quantum efficiency of a solar cell. A PV module consists of cells in series and also has bypass diodes across strings. To measure the quantum e
Autor:
Golive Yogeswara Rao, Anil Kottantharayil, Sonali Bhaduri, Hemant Kumar Singh, Shashwata Chattopadhyay, Narendra Shiradkar, Brij M. Arora, Rajiv Dubey, Sachin Zachariah, K. L. Narasimhan, Chetan Singh Solanki, Juzer Vasi
Publikováno v:
2019 IEEE 46th Photovoltaic Specialists Conference (PVSC).
Electroluminescence (EL) imaging is an essential tool that signifies the inactive areas (dark area in the image) in a PV module which are not visible to the naked eye. A total of ~700 EL images of fielded PV modules taken during the All India Survey
Autor:
Anil Kottantharayil, Ashok Sharma, Tarun S. Yadav, Prabir Basu, Brij M. Arora, K. L. Narasimhan, K. P. Sreejith, Sandeep Kumbhar
Publikováno v:
Bulletin of Materials Science. 42
A high efficiency (> $$18\%$$ ) industrial large area crystalline silicon wafer solar cell fabrication process generally requires industrial equipment with large footprint, high capital and running costs. Stricter processing window, continuous monito
Autor:
Tarun S. Yadav, Ashok Sharma, K. Sandeep, K. L. Narasimhan, Prabir Basu, P. Pradeep, Anil Kottantharayil, Brij M. Arora
Publikováno v:
Springer Proceedings in Physics ISBN: 9783319976037
In this work, we report a low-cost, industrially viable chemical oxidation process (named as NCPRE-oxide process) using sodium hypochlorite (NaOCl) solution applicable to 5-inch pseudo-square monocrystalline silicon Al-BSF solar cells. Introduction o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0f77e7865262945adaa9a67b0171756
https://doi.org/10.1007/978-3-319-97604-4_68
https://doi.org/10.1007/978-3-319-97604-4_68
Autor:
Anil Kottantharayil, Prabir Basu, Manoj K. Ramanathi, Binny Nair, K. L. Narasimhan, Tarun S. Yadav, Ashok Sharma, Brij M. Arora
Publikováno v:
Springer Proceedings in Physics ISBN: 9783319976037
Photoluminescence (PL) imaging has emerged as an important tool for obtaining the spatial variation of the electronic and electrical parameters of Si wafer and solar cells. Since this is a contactless measurement, spatial lifetime maps can be obtaine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47078286e257c2666d34563b6feb1ed9
https://doi.org/10.1007/978-3-319-97604-4_54
https://doi.org/10.1007/978-3-319-97604-4_54
Autor:
Apurba Laha, Swagata Bhunia, Seshasainadh Pudi, V. S. Santhosh N. Varma Bellamkonda, Brij M. Arora
Publikováno v:
Nanotechnology. 31:46LT02
In this work, we report an ultra-high sensitive (S = 1.4 × 108%), prompt response and recovering Pt/Pt+SiO2 cermet layer/GaN-based hydrogen (H2) sensor. A sensor fabricated with a 15 nm cermet layer, comprising Pt and SiO2, deposited between 15 nm P