Zobrazeno 1 - 10
of 1 786
pro vyhledávání: '"Briggs, G."'
To build a large scale quantum circuit comprising millions of cryogenic qubits will require an efficient way to supply large numbers of classic control signals. Given the limited number of direct connections allowed from room temperature, multiple le
Externí odkaz:
http://arxiv.org/abs/2403.18993
Autor:
Bian, Xinya, Joyce, Hannah J, Smith, Charles G, Kelly, Michael J, Briggs, G Andrew D, Mol, Jan A
In this paper, we present a reconfigurable multiplex (MUX) setup that increases the throughput of electrical characterisation at cryogenic temperature. The setup separates the MUX circuitry from quantum device under test (qDUT), allowing qDUT chips t
Externí odkaz:
http://arxiv.org/abs/2403.18987
Autor:
Chen, Zhixin, Grace, Iain M., Woltering, Steffen L., Chen, Lina, Gee, Alex, Baugh, Jonathan, Briggs, G. Andrew D., Bogani, Lapo, Mol, Jan A., Lambert, Colin J., Anderson, Harry L., Thomas, James O.
An unresolved challenge facing electronics at a few-nm scale is that resistive channels start leaking due to quantum tunneling. This affects the performance of nanoscale transistors, with single-molecule devices displaying particularly low switching
Externí odkaz:
http://arxiv.org/abs/2304.08535
Autor:
Tabanera-Bravo, Jorge, Vigneau, Florian, Monsel, Juliette, Aggarwal, Kushagra, Bresque, Léa, Fedele, Federico, Cerisola, Federico, Briggs, G. A. D., Anders, Janet, Aufèves, Alexia, Parrondo, Juan M. R., Ares, Natalia
Publikováno v:
Phys. Rev. Research 6, 013291 (2024)
Self-oscillations are the result of an efficient mechanism generating periodic motion from a constant power source. In quantum devices, these oscillations may arise due to the interaction between single electron dynamics and mechanical motion. We sho
Externí odkaz:
http://arxiv.org/abs/2211.04074
Autor:
Chen, Zhixin, Deng, Jie-Ren, Hou, Songjun, Bian, Xinya, Swett, Jacob L., Wu, Qingqing, Baugh, Jonathan, Briggs, G. Andrew D., Mol, Jan A., Lambert, Colin J., Anderson, Harry L., Thomas, James O.
Quantum interference in nano-electronic devices could lead to reduced-energy computing and efficient thermoelectric energy harvesting. When devices are shrunk down to the molecular level it is still unclear to what extent electron transmission is pha
Externí odkaz:
http://arxiv.org/abs/2205.08499
Autor:
Bian, Xinya, Chen, Zhixin, Sowa, Jakub K., Evangeli, Charalambos, Limburg, Bart, Swett, Jacob L., Baugh, Jonathan, Briggs, G. Andrew D., Anderson, Harry L., Mol, Jan A., Thomas, James O.
The interplay between nuclear and electronic degrees of freedom strongly influences molecular charge transport. Herein, we report on transport through a porphyrin dimer molecule, weakly coupled to graphene electrodes, that displays sequential tunneli
Externí odkaz:
http://arxiv.org/abs/2202.12682
Autor:
Schuff, Jonas, Lennon, Dominic T., Geyer, Simon, Craig, David L., Fedele, Federico, Vigneau, Florian, Camenzind, Leon C., Kuhlmann, Andreas V., Briggs, G. Andrew D., Zumbühl, Dominik M., Sejdinovic, Dino, Ares, Natalia
Publikováno v:
Quantum 7, 1077 (2023)
Pauli spin blockade (PSB) can be employed as a great resource for spin qubit initialisation and readout even at elevated temperatures but it can be difficult to identify. We present a machine learning algorithm capable of automatically identifying PS
Externí odkaz:
http://arxiv.org/abs/2202.00574
Autor:
Craig, D. L., Moon, H., Fedele, F., Lennon, D. T., Van Straaten, B., Vigneau, F., Camenzind, L. C., Zumbühl, D. M., Briggs, G. A. D., Osborne, M. A., Sejdinovic, D., Ares, N.
The discrepancies between reality and simulation impede the optimisation and scalability of solid-state quantum devices. Disorder induced by the unpredictable distribution of material defects is one of the major contributions to the reality gap. We b
Externí odkaz:
http://arxiv.org/abs/2111.11285
Autor:
Severin, B., Lennon, D. T., Camenzind, L. C., Vigneau, F., Fedele, F., Jirovec, D., Ballabio, A., Chrastina, D., Isella, G., de Kruijf, M., Carballido, M. J., Svab, S., Kuhlmann, A. V., Braakman, F. R., Geyer, S., Froning, F. N. M., Moon, H., Osborne, M. A., Sejdinovic, D., Katsaros, G., Zumbühl, D. M., Briggs, G. A. D., Ares, N.
The potential of Si and SiGe-based devices for the scaling of quantum circuits is tainted by device variability. Each device needs to be tuned to operation conditions. We give a key step towards tackling this variability with an algorithm that, witho
Externí odkaz:
http://arxiv.org/abs/2107.12975