Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Brierley, S. K."'
Autor:
Brierley, S. K., Griffin, J. A.
Publikováno v:
Journal of Applied Physics; Nov1982, Vol. 53 Issue 11, p7951-7953, 3p
Autor:
Brierley, S. K., Fonstad, C. G.
Publikováno v:
Journal of Applied Physics; Aug1975, Vol. 46 Issue 8, p3678-3680, 3p
Publikováno v:
Journal of Applied Physics; 7/15/1994, Vol. 76 Issue 2, p1343, 3p
Autor:
Hoke, W. E., Lyman, P. S., Labossier, W. H., Brierley, S. K., Hendriks, H. T., Shanfield, S. R., Aucoin, L. M., Kazior, T. E.
Publikováno v:
Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1992, Vol. 10 Issue 3, p1066-1069, 4p
Publikováno v:
Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1993, Vol. 11 Issue 3, p962-964, 3p
Autor:
Hoke, W. E., Lemonias, P. J., Weir, D. G., Brierley, S. K., Hendriks, H. T., Adlerstein, M. G., Zaitlin, M. P.
Publikováno v:
Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1992, Vol. 10 Issue 2, p856-858, 3p
Autor:
Kazior, T. E., Brierley, S. K.
Publikováno v:
MRS Online Proceedings Library; 01/13/1992, Vol. 240, pN.PAG-1, 1p
Silicon CCDs have limited sensitivity to particles and photons with short penetration depth, due to the surface depletion caused by the inherent positive charge in the native oxide. Because of surface depletion, internally-generated electrons are tra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od________38::ffc62aaef475ea659f2de89c59763bd9
https://resolver.caltech.edu/CaltechAUTHORS:20141028-133726362
https://resolver.caltech.edu/CaltechAUTHORS:20141028-133726362
