Radiation effects microscopy for failure analysis of microelectronic devices

Autor: Vizkelethy, G., Doyle, B.L., Brice, D.K., Dodd, P.E., Shaneyfelt, M.R., Schwank, J.R.

Publikováno v: In Nuclear Inst. and Methods in Physics Research, B April 2005 231(1-4):467-475

Spatial distribution measured by the modulation transfer function

Autor: Rossi, P, Brice, D.K, Doyle, B.L

Publikováno v: In Nuclear Inst. and Methods in Physics Research, B 2003 210:85-91

Near-threshold energy dependence of Xe-induced displacements on Ge(001)

Autor: Picraux, S.T., Brice, D.K., Horn, K.M., Tsao, J.Y., Chason, E.

Publikováno v: Nuclear Instruments and Methods in Physics Research Section B; March 1990, Vol. 48 Issue: 1-4 p414-418, 5p

ION IMPLANTATION

Autor: Davidson, S.M., Booker, G.R., Bicknell, R.W., Allen, R.M., Hart, R.R., Marsden, D.A., Whitton, J.L., Masters, B.J., Fairfield, J.M., Crowder, B.L., Title, R.S., Brice, D.K., Westmoreland, J.E., Sigmund, P.

Publikováno v: Davidson, S M, Booker, G R, Bicknell, R W, Allen, R M, Hart, R R, Marsden, D A, Whitton, J L, Masters, B J, Fairfield, J M, Crowder, B L, Title, R S, Brice, D K, Westmoreland, J E & Sigmund, P 1971, ' ION IMPLANTATION ', Paper presented at Int Conf on Ion Implantation in Semiconductors, 1st, Thousand Oaks, United States, 04/05/1970-09/05/1970 .

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______3062::ac775655f5f033765a3a1d70517063c7
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