Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Brian W Karr"'
Autor:
Alfred Cerezo, Eric Walter Singleton, Y. Q. Ma, Amanda K. Petford-Long, Brian W Karr, D.J. Larson
Magnetic tunnel junctions have applications in a range of spin-electronic devices. The functional properties of such devices are critically dependant on the nanoscale morphology of the insulating barrier (usually only a few atomic layers thick) that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6c9ab417edb6521eb764d2c20cab2a6e
https://doi.org/10.1063/1.2149188
https://doi.org/10.1063/1.2149188
Autor:
Jiaoming Qiu, Shaun Eric McKinlay, Mohammed Sharia Ullah Patwari, Yonghua Chen, Hua Yuan, Eric Walter Singleton, Brian W Karr
Publikováno v:
IEEE Transactions on Magnetics. 48:1765-1769
A low temperature chemical ordering approach was presented for L10 phase FePt alloy's application in read sensor hard bias. We show that platinum seed and cap layers together can help the iron-rich FePt layer to achieve A1 to L10 phase transformation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97dc9d4a6733def782c36dddd0399b0d
https://doi.org/10.1109/tmag.2011.2170555
https://doi.org/10.1109/tmag.2011.2170555
Publikováno v:
IEEE Transactions on Magnetics. 44:2465-2471
The rapid increase in areal density storage capacity in magnetic hard disk drives over the past decade has, to a large extent, been enabled by advances in reader technologies. We will here review the underlying physics of spin valves and tunneling re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1ae6d2fe4e0e9990e03369ef9a95453
https://doi.org/10.1109/tmag.2008.2002373
https://doi.org/10.1109/tmag.2008.2002373
Autor:
Nurul Amin, Paul E. Anderson, Pu-Ling Lu, Philip L. Steiner, Shawn Chen, Janusz J. Nowak, Patrick J. Ryan, P. Kolbo, Sining Mao, Nan-Hsiung Yeh, Yong Chang Feng, Mark T. Kief, James K. Price, Tom Boonstra, Haeseok Cho, Zhenyong Zhang, Brian W Karr, Song Xue, Eric S. Linville, Mark Ostrowski, B. Swanson, Olle Gunnar Heinonen, Alexander M. Shukh
Publikováno v:
IEEE Transactions on Magnetics. 40:307-312
Tunneling magnetoresistive (TMR) readers capable of 150 Gb/in/sup 2/ of areal density magnetic recording for hard disk drive were demonstrated with bit-error-rate performance. The head design used is basically a bottom type stack of Ta/PtMn/CoFe/Ru/C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc186df15859e9f6fa4a0bd2f4a0432e
https://doi.org/10.1109/tmag.2003.821167
https://doi.org/10.1109/tmag.2003.821167
Publikováno v:
2014 Conference on Information Storage and Processing Systems.
The magnetic spacing of Hard Disk Drives (HDD) needs to be reduced for increasing areal density. It is therefore very challenging to maintain constant fly height at a sub-2nm clearance. Any resonance of the slider or suspension can cause modulations
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4052892ed1b1cb55ad1a3e4c017cbb1
https://doi.org/10.1115/isps2014-6984
https://doi.org/10.1115/isps2014-6984
Publikováno v:
Physical Review B. 61:16137-16143
Ultrahigh vacuum scanning tunneling microscopy (STM) is used to characterize the surface morphology of TiN(001) epitaxial layers grown by dc reactive magnetron sputtering at growth temperatures of T{sub s}=650 and T{sub s}=750 degree sign C. An auxil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f80469fdb51ac8281399386feca2883
https://doi.org/10.1103/physrevb.61.16137
https://doi.org/10.1103/physrevb.61.16137
Publikováno v:
Surface and Coatings Technology. :403-408
The group IV-B transition metal nitride TiN is widely employed as a wear-resistant coating on mechanical components and as a diffusion barrier in microelectronic devices. We use the epitaxial growth of TiN as a model system for insight on the evoluti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f23b55a15b4446aa22856bf9f025e800
https://doi.org/10.1016/s0257-8972(97)00444-1
https://doi.org/10.1016/s0257-8972(97)00444-1
Autor:
Joseph E Greene, Ivan Petrov, J.-E. Sundgren, Brian W. Karr, Daniel B. Bergstrom, Lynnette D. Madsen, Yongdeok Kim, David G. Cahill
Publikováno v:
Journal of Applied Physics. 80:6699-6705
A low‐energy, high‐brightness, broad beam Cu ion source is used to study the effects of self‐ion energy Ei on the deposition of epitaxial Cu films in ultrahigh vacuum. Atomically flat Ge(001) and Si(001) substrates are verified by in situ scann
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42f4f7cd9b452312f7e6fdcdd8fb225b
https://doi.org/10.1063/1.363795
https://doi.org/10.1063/1.363795
Publikováno v:
Applied Physics Letters. 70:1703-1705
The evolution of surface morphology and microstructure during growth of single crystal TiN(001) is characterized by in situ scanning tunneling microscopy and postdeposition plan-view transmission electron microscopy. The TiN layers are grown on MgO a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f8bb8a42ba96bd12961f895ca7c7486
https://doi.org/10.1063/1.118675
https://doi.org/10.1063/1.118675