Zobrazeno 1 - 10
of 43
pro vyhledávání: '"Brian Tyrrell"'
Autor:
Rabindra N. Das, Vladimir Bolkhovsky, Alex Wynn, Jeffrey Birenbaum, Evan Golden, Ravi Rastogi, Scott Zarr, Brian Tyrrell, Leonard M. Johnson, Mollie E. Schwartz, Jonilyn L. Yoder, Paul W. Juodawlkis
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-9 (2023)
Abstract Superconducting integrated circuit is a promising “beyond-CMOS” device technology enables speed-of-light, nearly lossless communications to advance cryogenic (4 K or lower) computing. However, the lack of large-area superconducting IC ha
Externí odkaz:
https://doaj.org/article/3fe7e6f43ec44825b75ef2b40002f4f3
Autor:
Brian Tyrrell
Publikováno v:
Electronic Proceedings in Theoretical Computer Science, Vol 283, Iss Proc. CAPNS 2018, Pp 28-49 (2018)
The aim of this paper is twofold: first we will use vector space distributional compositional categorical models of meaning to compare the meaning of sentences in Irish and in English (and thus ascertain when a sentence is the translation of another
Externí odkaz:
https://doaj.org/article/e83ae62955d64a25bb1ee993553de7c2
Autor:
Suraj S. Cheema, Nirmaan Shanker, Li-Chen Wang, Cheng-Hsiang Hsu, Shang-Lin Hsu, Yu-Hung Liao, Matthew San Jose, Jorge Gomez, Wriddhi Chakraborty, Wenshen Li, Jong-Ho Bae, Steve K. Volkman, Daewoong Kwon, Yoonsoo Rho, Gianni Pinelli, Ravi Rastogi, Dominick Pipitone, Corey Stull, Matthew Cook, Brian Tyrrell, Vladimir A. Stoica, Zhan Zhang, John W. Freeland, Christopher J. Tassone, Apurva Mehta, Ghazal Saheli, David Thompson, Dong Ik Suh, Won-Tae Koo, Kab-Jin Nam, Dong Jin Jung, Woo-Bin Song, Chung-Hsun Lin, Seunggeol Nam, Jinseong Heo, Narendra Parihar, Costas P. Grigoropoulos, Padraic Shafer, Patrick Fay, Ramamoorthy Ramesh, Souvik Mahapatra, Jim Ciston, Suman Datta, Mohamed Mohamed, Chenming Hu, Sayeef Salahuddin
Publikováno v:
Nature, vol 604, iss 7904
With the scaling of lateral dimensions in advanced transistors, an increased gate capacitance is desirable both to retain the control of the gate electrode over the channel and to reduce the operating voltage1. This led to a fundamental changein the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c4fe30529e321261100d5a1d53aa55c9
https://doi.org/10.1038/s41586-022-04425-6
https://doi.org/10.1038/s41586-022-04425-6
Autor:
Cheng-Hsiang Hsu, Yoonsoo Rho, Steve Volkman, Brian Tyrrell, Suman Datta, Corey Stull, Zhan Zhang, Woo-Bin Song, Suraj Cheema, Jim Ciston, Padraic Shafer, Apurva Mehta, Won-Tae Koo, Chenming Hu, Gianni Pinelli, Jong-Ho Bae, Li-Chen Wang, Seung-Geol Nam, Matthew A. Cook, Dong Jin Jung, Jorge Gomez, Dominick Pipitone, Patrick Fay, Sayeef Salahuddin, John W. Freeland, Chung-Hsun Lin, Jinseong Heo, Kab-Jin Nam, Wenshen Li, Mohamed Mohamed, Nirmaan Shanker, Costas P. Grigoropoulos, Matthew San Jose, Ramamoorthy Ramesh, Vladimir Stoica, Ghazal Soheli, Christopher J. Tassone, Dong Ik Suh, David Thompson, Yu-Hung Liao, Ravi Rastogi, Shang-Lin Hsu, Daewoong Kwon
With the scaling of lateral dimensions in advanced transistors, an increased gate capacitance is desirable both to retain the control of the gate electrode over the channel and to reduce the operating voltage. This led to the adoption of high-κ diel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17f8aaa2e1c2c48a54ff1b9ae31d4a4b
https://doi.org/10.21203/rs.3.rs-413053/v1
https://doi.org/10.21203/rs.3.rs-413053/v1
Autor:
Suraj S, Cheema, Nirmaan, Shanker, Li-Chen, Wang, Cheng-Hsiang, Hsu, Shang-Lin, Hsu, Yu-Hung, Liao, Matthew, San Jose, Jorge, Gomez, Wriddhi, Chakraborty, Wenshen, Li, Jong-Ho, Bae, Steve K, Volkman, Daewoong, Kwon, Yoonsoo, Rho, Gianni, Pinelli, Ravi, Rastogi, Dominick, Pipitone, Corey, Stull, Matthew, Cook, Brian, Tyrrell, Vladimir A, Stoica, Zhan, Zhang, John W, Freeland, Christopher J, Tassone, Apurva, Mehta, Ghazal, Saheli, David, Thompson, Dong Ik, Suh, Won-Tae, Koo, Kab-Jin, Nam, Dong Jin, Jung, Woo-Bin, Song, Chung-Hsun, Lin, Seunggeol, Nam, Jinseong, Heo, Narendra, Parihar, Costas P, Grigoropoulos, Padraic, Shafer, Patrick, Fay, Ramamoorthy, Ramesh, Souvik, Mahapatra, Jim, Ciston, Suman, Datta, Mohamed, Mohamed, Chenming, Hu, Sayeef, Salahuddin
Publikováno v:
Nature. 604(7904)
With the scaling of lateral dimensions in advanced transistors, an increased gate capacitance is desirable both to retain the control of the gate electrode over the channel and to reduce the operating voltage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::77332fdd50103bf7aa4204de78c57539
https://pubmed.ncbi.nlm.nih.gov/35388197
https://pubmed.ncbi.nlm.nih.gov/35388197
Autor:
Brian Tyrrell
Publikováno v:
Between Making and Knowing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a80ec33a83e66799172b8b7e60fee280
https://doi.org/10.1142/9789811207631_0032
https://doi.org/10.1142/9789811207631_0032
Autor:
Brian Tyrrell
Publikováno v:
Historical Studies in the Natural Sciences. 48:536-547
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::907f0eae51bc7cf202542f6584fd7be4
https://doi.org/10.1525/hsns.2018.48.4.536
https://doi.org/10.1525/hsns.2018.48.4.536
Autor:
Brian Tyrrell
Publikováno v:
Historical Studies in the Natural Sciences. 45:549-576
In the first four decades of the twentieth century, horse racing was one of America’s most popular spectator sports. Members of America’s elite took to breeding and racing horses as one of their preferred pastimes. Coinciding with an increase in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8d4512170fcfd4ff2beb75fe04a8c2a
https://doi.org/10.1525/hsns.2015.45.4.549
https://doi.org/10.1525/hsns.2015.45.4.549
Autor:
Ewart W. Blackmore, T. Soares, Marty R. Shaneyfelt, Chenson Chen, Weilin Hu, Ronald D. Schrimpf, Harold L. Hughes, Brian Tyrrell, P. M. Gouker, P.J. McMarr, J.R. Schwank, J. R. Ahlbin, Richard D'Onofrio, Peter W. Wyatt, M.E. Nelson, K.J. Delikat, Stephanie L. Weeden-Wright
Publikováno v:
IEEE Transactions on Nuclear Science. 58:2845-2854
Radiation effects are presented for the first time for vertically integrated 3 × 64-kb SOI SRAM circuits fabricated using the 3D process developed at MIT Lincoln Laboratory. Three fully-fabricated 2D circuit wafers are stacked using standard CMOS fa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57e537fc4b8fb40fd815b508532bef0d
https://doi.org/10.1109/tns.2011.2172463
https://doi.org/10.1109/tns.2011.2172463
Autor:
Brian Tyrrell, M. Renzi, Matthew J. Gadlage, J. R. Ahlbin, M. P. King, Peter W. Wyatt, Chenson Chen, En Xia Zhang, Robert A. Weller, Stephanie L. Weeden-Wright, Bharat L. Bhuva, P. M. Gouker, Lloyd W. Massengill, N. J. Gaspard, Ronald D. Schrimpf, N. M. Atkinson
Publikováno v:
IEEE Transactions on Nuclear Science. 58:2555-2562
Single event transients are characterized for the first time in logic gate circuits fabricated in a novel 3DIC technology where SET test circuits are vertically integrated on three tiers in a 20- μm-thick layer. This 3D technology is extremely well
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0580ea617e7d9f47a4338696d954c86d
https://doi.org/10.1109/tns.2011.2172462
https://doi.org/10.1109/tns.2011.2172462