Zobrazeno 1 - 10
of 100
pro vyhledávání: '"Brian S. Swartzentruber"'
Publikováno v:
ACS Omega, Vol 4, Iss 5, Pp 9376-9382 (2019)
Externí odkaz:
https://doaj.org/article/a11b1e1d451e4acc94c97d0d854eb80e
Publikováno v:
IEEE Electron Device Letters. 40:686-689
Nanowire transistors are typically undoped devices whose characteristics depend strongly on the injection of carriers from the electrical contacts. In this letter, we fabricate and characterize SiGe nanowire transistors with an n-p-n doping profile a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf28507d4c39bbef34a57512c606670d
https://doi.org/10.1109/led.2019.2905527
https://doi.org/10.1109/led.2019.2905527
Autor:
Timothy N. Lambert, Julian A. Vigil, Collin J. Delker, Thomas E. Beechem, Brian S. Swartzentruber, Jonathon Duay
Publikováno v:
ACS Applied Materials & Interfaces. 10:2040-2050
Carbon-coated α-MnO2 nanowires (C-MnO2 NWs) were prepared from α-MnO2 NWs by a two-step sucrose coating and pyrolysis method. This method resulted in the formation of a thin, porous, low mass-percentage amorphous carbon coating (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c84a866f55960628ca35dbb5e7748f43
https://doi.org/10.1021/acsami.7b16576
https://doi.org/10.1021/acsami.7b16576
Autor:
Mark A. Rodriguez, Suzanne E. White, Brian S. Swartzentruber, Maria Kelly, Michael T. Brumbach, Timothy N. Lambert, Julian A. Vigil, Collin J. Delker, Danae J. Davis
Publikováno v:
The Journal of Physical Chemistry C. 121:2789-2797
Nickel-doped α-MnO2 nanowires (Ni−α-MnO2) were prepared with 3.4% or 4.9% Ni using a hydrothermal method. A comparison of the electrocatalytic data for the oxygen reduction reaction (ORR) in alkaline electrolyte versus that obtained with α-MnO2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2cf14dac0ef03ddf63d84b16cf01cd2a
https://doi.org/10.1021/acs.jpcc.6b11252
https://doi.org/10.1021/acs.jpcc.6b11252
Autor:
Enzhi Xu, Nikolai A. Sinitsyn, Brian S. Swartzentruber, Han Htoon, Shijian Zheng, Jaime Avilés Acosta, Jian Wang, Zhen Li, Shixiong Zhang, Nan Li
Publikováno v:
Nano Research. 9:820-830
Bulk PbTe and alloy compounds thereof are well-known thermoelectric materials for electric power generation. Among these alloys, PbSnTe hosts unique topological surface states that may have improved thermoelectric properties. Here we report on the va
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d5e54723b05a4e64d1b117441ca185a
https://doi.org/10.1007/s12274-015-0961-1
https://doi.org/10.1007/s12274-015-0961-1
Autor:
Julian A, Vigil, Timothy N, Lambert, Jonathon, Duay, Collin J, Delker, Thomas E, Beechem, Brian S, Swartzentruber
Publikováno v:
ACS applied materialsinterfaces. 10(2)
Carbon-coated α-MnO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::5ef1a8db01e5ec9513f9bc1f25319c0f
https://pubmed.ncbi.nlm.nih.gov/29266915
https://pubmed.ncbi.nlm.nih.gov/29266915
Publikováno v:
Nano Letters. 15:7258-7264
Knowledge of nanoscale heteroepitaxy is continually evolving as advances in material synthesis reveal new mechanisms that have not been theoretically predicted and are different than what is known about planar structures. In addition to a wide range
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::886c0d5f61c45609a3a1c108e603a411
https://doi.org/10.1021/acs.nanolett.5b02313
https://doi.org/10.1021/acs.nanolett.5b02313
Autor:
Brian S. Swartzentruber, Quanxi Jia, Shixiong Zhang, Nan Li, Zhen Li, Aiping Chen, Jinkyoung Yoo, Nikolai A. Sinitsyn, Yaroslav B. Losovyj, Enzhi Xu
The recent discovery of excellent thermoelectric properties and topological surface states in SnTe-based compounds has attracted extensive attention in various research areas. Indium doped SnTe is of particular interest because, depending on the dopi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a397df0b3e7082e5d4b96ef85f76f840
http://arxiv.org/abs/1705.03874
http://arxiv.org/abs/1705.03874
Autor:
E. N. Yitamben, Malcolm S. Carroll, Shashank Misra, Brian S. Swartzentruber, R. J. Simonson, R.E. Butera, Ezra Bussmann
Using scanning tunneling microscopy (STM), we investigate oxide-induced growth pits in Si thin films deposited by molecular beam epitaxy. In the transition temperature range from 2D adatom islanding to step-flow growth, systematic controlled air leak
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6ae54cdcdd2f5c0014c62cf1186f0d8d