Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Brian M. McSkimming"'
Publikováno v:
Education Sciences, Vol 14, Iss 2, p 145 (2024)
STEM (Science, Technology, Engineering, and Mathematics) was once not seen as a place for everyone. In fact, a powerful majority of people believed that individuals had to have predetermined characteristics that made them able to bear such vast and l
Externí odkaz:
https://doaj.org/article/c31206b1b7a84c60bc1ce08f1796b193
Publikováno v:
Proceedings of the 53rd ACM Technical Symposium on Computer Science Education V. 2.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d679668c46ade67318cd8240927a6131
https://doi.org/10.1145/3478432.3499091
https://doi.org/10.1145/3478432.3499091
Autor:
Brian M. McSkimming, Adrienne Decker
Publikováno v:
Proceedings of the 53rd ACM Technical Symposium on Computer Science Education V. 2.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::50500cebdeee93028becf3fa33ca8830
https://doi.org/10.1145/3478432.3499233
https://doi.org/10.1145/3478432.3499233
Investigating the usage of Likert-style items within Computer Science Education Research Instruments
Publikováno v:
2021 IEEE Frontiers in Education Conference (FIE).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07717f3055625c7ba703f347d3b4eb2e
https://doi.org/10.1109/fie49875.2021.9637198
https://doi.org/10.1109/fie49875.2021.9637198
Autor:
Brian M. McSkimming, Ashish Alexander, Ilke Arslan, Bruce W. Arey, Christopher J. K. Richardson
Publikováno v:
Journal of Materials Research. 32:4067-4075
The nucleation and growth of Al on 7 × 7 and $\sqrt 3 \times \sqrt 3$ R30 Al reconstructed Si(111) that result in strain-free Al overgrown films grown with an atomically abrupt metamorphic interface are compared. The reconstructed surfaces and abrup
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ab147bd8a23e7ca492d40e0753239f5
https://doi.org/10.1557/jmr.2017.322
https://doi.org/10.1557/jmr.2017.322
Autor:
Christine Jackson, James S. Speck, Brian M. McSkimming, Aaron R. Arehart, Tyler J. Grassman, Steven A. Ringel
Publikováno v:
ECS Journal of Solid State Science and Technology. 6:P489-P494
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8c3873df9f1d084ba29441eb14269d9
https://doi.org/10.1149/2.0041708jss
https://doi.org/10.1149/2.0041708jss
Publikováno v:
Journal of Crystal Growth. 386:168-174
Plasma-assisted molecular beam epitaxial (PAMBE) growth of gallium nitride (GaN) was explored with a novel modification of a commercially available nitrogen plasma source. The modified nitrogen plasma source enabled a dramatic increase in the flux of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1dce2b328dc59c7c3491cff97fe0414a
https://doi.org/10.1016/j.jcrysgro.2013.10.013
https://doi.org/10.1016/j.jcrysgro.2013.10.013
Autor:
Pran K. Paul, Santino D. Carnevale, D. A. Gleason, Julia I. Deitz, Jonathan P. Pelz, Aaron R. Arehart, Tyler J. Grassman, K. Galiano, Steven A. Ringel, Brian M. McSkimming, Z. Zhang, James S. Speck
Publikováno v:
Journal of Applied Physics. 123:224504
Defects in semiconductors lead to deleterious effects in electron devices, but identifying their physical sources can be difficult. An example of this in gallium nitride (GaN) high electron mobility transistors is the well-known trap state located at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4462a925f0f8c6ac1de37fc66cb7c593
https://doi.org/10.1063/1.5022806
https://doi.org/10.1063/1.5022806
Autor:
En Xia Zhang, Ronald D. Schrimpf, Brian M. McSkimming, Steven A. Ringel, Z. Zhang, Erin C. H. Kyle, Daniel M. Fleetwood, James S. Speck, Jin Chen, Aaron R. Arehart, Esmat Farzana, Wenyuan Sun
Publikováno v:
Journal of Applied Physics. 118:155701
The impact of annealing of proton irradiation-induced defects in n-type GaN devices has been systematically investigated using deep level transient and optical spectroscopies. Moderate temperature annealing (>200–250 °C) causes significant reducti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e3a4cc43824d445813b94d0b06273d4
https://doi.org/10.1063/1.4933174
https://doi.org/10.1063/1.4933174
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 33:05E128
In the present study, the authors report on a modified Riber radio frequency (RF) nitrogen plasma source that provides active nitrogen fluxes more than 30 times higher than those commonly used for plasma assisted molecular beam epitaxy (PAMBE) growth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84d5ea5ce3ec4dded83b37ffc16faa5d
https://doi.org/10.1116/1.4928415
https://doi.org/10.1116/1.4928415