Zobrazeno 1 - 10
of 95
pro vyhledávání: '"Brian Keyes"'
Autor:
Zhibo Zhao, Sachit Grover, Brian Keyes, Feng Liao, Ingrid Repins, Miguel A. Contreras, Rommel Noufi, Kannan Ramanathan, Sanjoy Paul, Jian V. Li
Publikováno v:
IEEE Journal of Photovoltaics. 8:871-878
The open-circuit voltage ( V OC) in a generic TCO/buffer/absorber/back-contact thin-film solar cell device is a key parameter in the recombination analysis. In particular, V OC is sensitively influenced by the interface recombination at the buffer/ab
Autor:
Erin Giles, Brian Keyes
Publikováno v:
Cureus
Hemorrhagic shock is a potentially devastating surgical condition that can present unexpectedly. This original case report involves a 57-year-old man who experienced unexpected significant blood loss as a result of iatrogenic injury to the pulmonary
Autor:
David S. Ginley, Jeff Alleman, Lynn Gedvilas, Charles W. Teplin, Brian Keyes, Maikel F.A.M. van Hest, Matthew Taylor, M. S. Dabney, Dennis W. Readey, John D. Perkins, Bobby To
Publikováno v:
Advanced Functional Materials. 18:3169-3178
Transparent conducting oxides (TCOs) are increasingly critical components in photovoltaic cells, low-e windows, flat panel displays, electrochromic devices, and flexible electronics. The conventional TCOs, such as Sn-doped In{sub 2}O{sub 3}, are crys
Autor:
Stephen S. Kelley, Margaretha Söderqvist Lindblad, Timothy G. Rials, Brian Keyes, Lynn Gedvilas
Publikováno v:
Cellulose. 15:23-33
Fourier transform infrared (FTIR) spectroscopic imaging was used to study the initial diffusion of different solvents in cellulose acetate butyrate (CAB) films containing different amounts of acetyl and butyryl substituents. Different solvents and so
Autor:
Timothy J. Coutts, Sukit Limpijumnong, Craig L. Perkins, Joseph M. Luther, Su-Huai Wei, Sally Asher, Teresa M. Barnes, Helio R. Moutinho, Brian Keyes, Xiaonan Li, Shengbai Zhang
Publikováno v:
Journal of Crystal Growth. 287:94-100
We studied the role of impurities in nitrogen-doped ZnO thin film to understand the difficulty of producing p-type ZnO via nitrogen doping. The ZnO:N films were fabricated by low-pressure metal-organic chemical vapor deposition (MOCVD) using diethylz
Publikováno v:
Journal of Crystal Growth. 281:297-302
Polycrystalline zinc oxide (ZnO) and nitrogen-doped zinc oxide (ZnO:N) films, about 1 μm thick, were grown by metalorganic chemical vapor deposition on crystalline silicon substrates. Infrared absorption measurements reveal a complex growth chemistr
Autor:
William N. Shafarman, M. E. Beck, B. von Roedern, David L. Young, L. Chen, M. D. Gonzalez, B. J. Stanbery, Ingrid Repins, Xuege Wang, Alan E. Delahoy, D. Tarrant, V. K. Kapur, Sheng S. Li, Brian Keyes, Timothy J. Anderson, L. L. Kerr, Craig L. Perkins, Sally Asher, D. G. Jensen, Wyatt K. Metzger
Publikováno v:
Progress in Photovoltaics: Research and Applications. 14:25-43
We report the results of an extensive study employing numerous methods to characterize carrier transport within copper indium gallium sulfoselenide (CIGSS) photovoltaic devices, whose absorber layers were fabricated by diverse process methods in mult
Autor:
John D. Perkins, Maikel F.A.M. van Hest, Lynn Gedvilas, Brian Keyes, Dennis W. Readey, David S. Ginley, M. S. Dabney, Charles W. Teplin, Jeff Alleman, Matthew Taylor, Bobby To
Publikováno v:
Measurement Science and Technology. 16:90-94
Indium–zinc-oxide (IZO) compositional libraries were deposited with dc magnetron sputtering onto glass substrates at 100 °C and analysed with high throughput, combinatorial techniques. The composition range from 4 to 95 at% In for Zn was explored.
Autor:
Errol Antonio C. Sanchez, Brian Keyes, Fengzhen Liu, Bob To, Scott Ward, Shulin Wang, Qi Wang, Lynn Gedvilas
Publikováno v:
Journal of Applied Physics. 96:2973-2979
High-quality amorphous silicon nitrides were deposited by hot-wire chemical vapor deposition using SiH4, NH3, and H2 gases. These films show a high deposition rate of 5A∕s, a low processing temperature of 300°C, an excellent conformal coverage, a
Publikováno v:
Applied Surface Science. :808-812
GaNP thin films grown by epitaxial processes show little or no carbon or oxygen incorporation when measured by secondary ion mass spectrometry. Accurate determination of impurity concentration is important for understanding the optical and electrical