Výsledky vyhledávání - "Brian K. Fuller"

Book Reviews: Computers and Technical Communication: Pedagogical and Programmatic Perspectives: Foundations for Teaching Technical Communication: Theory, Practice, and Program Design: Reader Feedback in Text Design: Validity of the Plus-Minus Method for the Pretesting of Public Information Brochures: The Practice of Technical and Scientific Communication: Writing in Professional Contexts

Autor: Stephen A. Bernhardt, Henrietta Nickels Shirk, Brian K. Fuller, Tracy Volz, Wendy Krieg-Stone

Publikováno v: Journal of Technical Writing and Communication. 29:305-322

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::581d01a16d35cc5a34025e41249b1f52
https://doi.org/10.2190/4whk-ptyu-vp0g-33lh

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Temperature dependence of relaxation times in electron focusing and antidot structures made from In0.53Ga0.47As/InP heterojunctions

Autor: C. M. Thrush, Vincent Bayot, Joseph P. Heremans, Brian K. Fuller

Publikováno v: Superlattices and Microstructures. 24:263-267

The magnetoresistance of antidot lattices and the magnetic field dependence of the three-terminal resistance of transverse electron focusing (TEF) devices is studied in a 2DEG in the lattice-matched In0.53Ga0.47As/InP heterojunction system, as a func

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::79cba42801b3fc8cb1989f1f8f3ec29d
https://doi.org/10.1006/spmi.1996.0262

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Temperature dependence of electron focusing inIn1−xGaxAs/InP heterojunctions

Autor: C. M. Thrush, Dale L. Partin, Brian K. Fuller, Joseph P. Heremans

Publikováno v: Physical Review B. 52:5767-5772

Transverse electron focusing is studied in a two-dimensional electron gas in the lattice-matched ${\mathrm{In}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{Ga}}_{\mathit{x}}$As/InP system, as a function of temperature (3 KT180 K) and areal electro

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::99aa7eaf385583c94d92a4667e6c12ad
https://doi.org/10.1103/physrevb.52.5767

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Role of a nucleation layer in suppressing interfacial pitting in

Autor: Lourdes Salamanca-Riba, Dale L. Partin, A. K. Ballal, L. Green, Joseph P. Heremans, Brian K. Fuller

Publikováno v: Journal of Electronic Materials. 22:383-389

In this work, we investigate the role of a low temperature nucleation layer on the interfacial properties of InAs epilayers grown on (100) semi-insulating InP substrates using a two-step metalorganic chemical vapor deposition method. Cross-sectional

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2f3499f1e7ebe6e98988d8327fe7540c
https://doi.org/10.1007/bf02661666

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Growth and characterization of indium arsenide thin films

Autor: Dale L. Partin, Brian K. Fuller, Joseph P. Heremans, L. Green, Donald T. Morelli, Christopher M. Thrush

Publikováno v: Journal of Electronic Materials. 20:1109-1115

The growth and characterization of indium arsenide films grown on indium phosphide substrates by the metal organic chemical vapor deposition (MOCVD) process is reported. Either ethyl dimethyl indium or trimethyl indium were found to be suitable in co

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d20405e8b4cc71a24e19821144c8fc2f
https://doi.org/10.1007/bf03030217

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Two‐dimensional electron gas magnetic field sensors

Autor: Dale L. Partin, Donald T. Morelli, C. M. Thrush, Joseph P. Heremans, Brian K. Fuller

Publikováno v: Applied Physics Letters. 57:291-293

We describe the use of accumulation layers of electron charge in applications as magnetoresistive devices. We consider two such systems: an InGaAs/InP heterostructure in which we identify a two‐dimensional electron gas from the observation of the q

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::026a05fd0800aedec00b4a3fc543d45d
https://doi.org/10.1063/1.103717

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