Zobrazeno 1 - 10
of 42
pro vyhledávání: '"Brian J. Grenon"'
Autor:
Brian J. Grenon, David Brinkley
Publikováno v:
SPIE Proceedings.
Since the introduction of 248 and 193 nm lithography sub-pellicle contamination has been a significant problem and a major contributor to reticle costs and semiconductor yield losses. The most common contaminant identified has been ammonium sulfate c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c72fc07c9ecc4d6bb2a914578224d4a0
https://doi.org/10.1117/12.2247576
https://doi.org/10.1117/12.2247576
Publikováno v:
Microelectronic Engineering. 27:225-230
In this paper, we will describe the design and performance of a new mask lithography tool, the ALTA-3000 system produced by Etec System, Inc. The introduction of both step-and-repeat reduction wafer lithography and raster-scanned electron beam mask l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::253e9d9a043607ce9945e6252759a765
https://doi.org/10.1016/0167-9317(94)00094-b
https://doi.org/10.1016/0167-9317(94)00094-b
Autor:
Brian J. Grenon
Publikováno v:
SPIE Proceedings.
Historically, photomask and wafer cleaning have been considered trivial tasks. The primary challenge had been simply the removal of particles that may have an impact on final product yield. As wavelengths decrease and energy on the image plane of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd2fea5c1e00fb6625e392806410e4c4
https://doi.org/10.1117/12.899055
https://doi.org/10.1117/12.899055
Autor:
Brian J. Grenon, Oleg P. Kishkovich
Publikováno v:
SPIE Proceedings.
Back (glass) side haze on photomasks has been previously reported and continues to present problems in many fabs throughout the industry. While some process changes have resulted in the reduction in both the occurrences and rate at which back side ha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a803566e5b0463f56a89d9cb369693b
https://doi.org/10.1117/12.840273
https://doi.org/10.1117/12.840273
Autor:
Brian J. Grenon
Publikováno v:
SPIE Proceedings.
Cost of ownership projections have often been used to determine the potential costs associated with the introduction of novel lithography applications. While they are often controversial and their accuracy or usefulness are a function of the validity
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e3bc79edacb9ade7589b8a77e53a27e
https://doi.org/10.1117/12.833468
https://doi.org/10.1117/12.833468
Publikováno v:
SPIE Proceedings.
In the relentless pursuit of device miniaturization and sustainable yield performance, resolution enhancement techniques (RET) such as optical proximity correction (OPC) and sub-resolution assist feature (SRAF) are identified as enabling technologies
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bb507d40276c86966cd8d3f3b9c9600
https://doi.org/10.1117/12.793048
https://doi.org/10.1117/12.793048
Publikováno v:
SPIE Proceedings.
An ultra-uniform, ultra-thin resist deposition process is presented. Nanometrix applications development with Ultra Thin Polymer Films (UTPF) production process addresses several problems related to resist deposition for lithographic applications. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2bcd496aba8d49778b3f90a1f7db9bbb
https://doi.org/10.1117/12.685640
https://doi.org/10.1117/12.685640
Autor:
Brian J. Grenon, Scott D. Hector
Publikováno v:
22nd European Mask and Lithography Conference.
Over the last decade SEMATECH has provided significant guidance in predicting mask costs and their potential effects on the cost of manufacturing semiconductors. Additionally, these projections have been used to appropriately fund activities that cou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0266ba5855c49ece6b33df48ba85214a
https://doi.org/10.1117/12.692622
https://doi.org/10.1117/12.692622
Publikováno v:
22nd European Mask and Lithography Conference.
The progressive mask defect problem is an industry-wide mask reliability issue. Even if masks are determined to be clean upon arrival from the mask supplier, some of these masks can show catastrophic defect growth over the course of production usage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29cabdb4c246a302c1084ae40db0dc94
https://doi.org/10.1117/12.692642
https://doi.org/10.1117/12.692642
Publikováno v:
SPIE Proceedings.
Progressive mask defect problems such as crystal growth or haze are key yield limiters at DUV lithography, especially in 300mm fabs. With the high energy photons involved in DUV lithography and large wafer size requiring longer continuous exposure of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3aa9c9c09259f3b9390bec222e594e71
https://doi.org/10.1117/12.617083
https://doi.org/10.1117/12.617083