Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Brian G. Rennex"'
Publikováno v:
Solid-State Electronics. 47:1589-1596
We present a model for simulating the capacitance–voltage ( C – V ) characteristics of polysilicon-gated MOS devices with thin oxides. The model includes substrate quantization effects through a modification of the total semiconductor charge. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76b4d6fa6127b3f3e28b558162caba80
https://doi.org/10.1016/s0038-1101(03)00099-6
https://doi.org/10.1016/s0038-1101(03)00099-6
Publikováno v:
Journal of The Electrochemical Society. 143:258-263
The methodology and experiment for certification of reference specimens for determining interstitial oxygen concentration in semiconductor silicon are reported. These reference specimens are intended for calibration of infrared spectrophotometers whi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9bc5dcf30c4dc60dbbaeec978ed444de
https://doi.org/10.1149/1.1836418
https://doi.org/10.1149/1.1836418
Publikováno v:
AIP Conference Proceedings.
FASTC2D is a Windows based computer program for conversion of two-dimensional (2D) scanning capacitance microscope (SCM) images of doped silicon into 2D carrier profiles. It utilizes interactive, user-friendly software to allow a user to enter electr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8119176fe1d5065083727804a4d3dffc
https://doi.org/10.1063/1.1354468
https://doi.org/10.1063/1.1354468
Publikováno v:
The 1998 international conference on characterization and metrology for ULSI technology.
Scanning capacitance microscope (SCM) image contrast measured on ion implanted P+/P and P+/N junction structures with identical dopant profiles, as a function of SCM operating conditions, is compared to a theoretical model of the SCM based on a two-d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ef1b09a87dff93635283491ea105ef2
https://doi.org/10.1063/1.56858
https://doi.org/10.1063/1.56858
Autor:
Wilfried Vandervorst, Yufei Li, Diana L. Ottaviani, Douglas J. Thomson, D. Venables, Jochonia N. Nxumalo, Joseph J. Kopanski, Mi-Chang Chang, J. S. McMurray, Clayton C. Williams, Hal Edwards, Suneeta S. Neogi, Jay F. Marchiando, Charles F. Machala, Richard San Martin, Vladimir A. Ukraintsev, R. Scott List, Peter De Wolf, Brian G. Rennex, V. V. Zavyalov
Publikováno v:
The 1998 international conference on characterization and metrology for ULSI technology.
The lack of a two-dimensional (2D) dopant standard and hence a priori knowledge of dopant distribution makes it impossible to unambiguously judge accuracy of any experimental or theoretical effort to characterize silicon doping in two-dimensions. Rec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f46c43ee84b2fa0cc4ad62bfc197641
https://doi.org/10.1063/1.56919
https://doi.org/10.1063/1.56919
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 20:2101
The accuracy with which two-dimensional carrier profiles can be extracted from scanning capacitance microscopy (SCM) images of doped structures in silicon depends on the model used to interpret the SCM differential capacitance data. This work validat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8051174b62a61b42e5ddf40ee66922f
https://doi.org/10.1116/1.1511238
https://doi.org/10.1116/1.1511238
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 18:409
Scanning capacitance microscopy (SCM) was used to image (1) boron dopant gradients in p-type silicon and (2) identical boron dopant gradients in n-type silicon. The bias voltage dependence of the apparent p–n junction location in the (SCM) images w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::103a199bdae70b33a4f1be0b93789fe7
https://doi.org/10.1116/1.591243
https://doi.org/10.1116/1.591243
Autor:
Brian G. Rennex
Publikováno v:
Journal of Thermal Insulation. 3:37-61
Approximate expressions are obtained for the apparent ther mal conductivity and thermal resistance, in the case of combined conduc tive and radiative heat transfer through low-density insulation. These ex pressions are obtained in the regimes of inte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d3cc8ecc5cd92fc9078c9a9438b39dc
https://doi.org/10.1177/109719637900300104
https://doi.org/10.1177/109719637900300104
Autor:
Brian G. Rennex
Publikováno v:
Journal of Thermal Insulation. 7:18-51
An error analysis is given for the 1-meter Guarded Hot Plate at the National Bureau of Standards. This apparatus is used to measure the thermal resistance of insulation materials. The individual contributions to uncertainty in thermal resistance are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::342e158943d2b0f275257f403758e6ec
https://doi.org/10.1177/109719638300700104
https://doi.org/10.1177/109719638300700104