Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Brian F. Donovan"'
Autor:
Enrique D. Gomez, Zhe Chen, Tian Zhang, Seong H. Kim, Bing Zhang, Ziyu Liu, Wengchang Lu, Ronald J. Warzoha, Jerry Bernholc, Xin Chen, Qiyan Zhang, Qiming Zhang, Brian F. Donovan
Publikováno v:
Matter. 4:2448-2459
Summary Polymers with high dielectric breakdown strength (Eb) over a broad temperature range are vital for many applications. The presence of weak points, such as voids and free volume, severely limit the Eb of many high-temperature polymers. Here, w
Autor:
Edward P. Gorzkowski, Ashutosh Giri, Tyler Cosby, Ronald J. Warzoha, Adam A. Wilson, Andrew J. Borgdorff, Nicholas T. Vu, Eric A. Patterson, Brian F. Donovan
Publikováno v:
Macromolecules. 53:11089-11097
Thin-film (5–20 μm) polymer dielectrics are a critical component in high energy density capacitors. Understanding thermal transport in these materials is critical to addressing thermally enabled di...
Autor:
Brian F. Donovan, Ronald J. Warzoha
Publikováno v:
Physical review letters. 128(12)
Publikováno v:
International Journal of Heat and Mass Transfer. 130:874-881
Interfaces play a critical role in heat dissipation for electronics packaging applications, thermoelectric energy conversion, data center cooling and renewable energy systems architectures. They are particularly influential as device length scales ar
Autor:
Brian F. Donovan, Ashutosh Giri, David H. Olson, Patrick E. Hopkins, John A. Tomko, S. M. O’Malley, John T. Gaskins
Publikováno v:
Langmuir. 35:2106-2114
Understanding the effects and limitations of solid/liquid interfaces on energy transport is crucial to applications ranging from nanoscale thermal engineering to chemical synthesis. Until now, the majority of experimental evidence regarding solid/liq
Publikováno v:
Review of Scientific Instruments. 93:084904
Time delayed pump–probe measurement techniques, such as Time Domain Thermoreflectance (TDTR), have opened up a wealth of opportunities for metrology at ultra-fast timescales and nanometer length scales. For nanoscale thermal transport measurements,
Autor:
Adam A. Wilson, Samuel Graham, Ronald J. Warzoha, Patrick E. Hopkins, Darshan G. Pahinkar, Zhiting Tian, Brian F. Donovan, Sukwon Choi, Laura B. Ruppalt, Nazli Donmezer, Ashutosh Giri, Jingjing Shi
Publikováno v:
Journal of Electronic Packaging. 143
This review introduces relevant nanoscale thermal transport processes that impact thermal abatement in power electronics applications. Specifically, we highlight the importance of nanoscale thermal transport mechanisms at each layer in material hiera
Autor:
Matteo Alberghini, Gang Chen, Pietro Asinari, Richard M. Ogsood, Svetlana V. Boriskina, Volodymyr F. Korolovych, Ronald J. Warzoha, Evgeny V. Morozov, Andrey E. Miroshnichenko, Brian F. Donovan, Haroldo T. Hattori, L. Marcelo Lozano, Daeyeon Lee, Matteo Fasano, Yi Huang
Publikováno v:
OSA Advanced Photonics Congress (AP) 2020 (IPR, NP, NOMA, Networks, PVLED, PSC, SPPCom, SOF).
We will discuss new metamaterials with tunable photon and phonon transport properties achieved by either sculpting the meso-scale structure of polymers or using polymers to sculpt the internal structure of nanoparticle arrays.
Autor:
Adam A. Wilson, Brian F. Donovan, Ronald J. Warzoha, Trent Perry, Longnan Li, Andrew N. Smith, E. Getto, Nenad Miljkovic, Nicholas T. Vu
In this work, we develop a numerical fitting routine to extract multiple thermal parameters using frequency-domain thermoreflectance (FDTR) for materials having non-standard, non-semi-infinite geometries. The numerical fitting routine is predicated o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b997d6b14971a36050904adbc7500e1c
Autor:
Chester J. Szwejkowski, Mohammadhosein Ghasemi Baboly, Susan B. Rempe, Jeffrey L. Braun, Ashutosh Giri, Mirza Elahi, Zayd C. Leseman, Seyedhamidreza Alaie, Drew F. Goettler, Ying Bing Jiang, Dalaver H. Anjum, Patrick E. Hopkins, Brian F. Donovan, John T. Gaskins, Saharoui Chaieb
Publikováno v:
ACS Applied Materials & Interfaces. 10:37679-37684
Focused ion beam (FIB) technology has become a valuable tool for the microelectronics industry and for the fabrication and preparation of samples at the micro/nanoscale. Its effects on the thermal transport properties of Si, however, are not well und