Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Brian D. Tierney"'
Publikováno v:
ICRC
To advance the energy efficiency of general digital computing far beyond the thermodynamic limits that apply to conventional digital circuits will require utilizing the principles of reversible computing. It has been known since the early 1990s that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::012cd6cfd71b147938235574f9010d66
https://doi.org/10.1109/icrc2020.2020.00014
https://doi.org/10.1109/icrc2020.2020.00014
Autor:
Robert W. Brocato, Anirudh Jain, Michael P. Frank, Alexander H. Hsia, Nancy A. Missert, Karpur Shukla, Thomas M. Conte, Brian D. Tierney
Publikováno v:
ICCD
The field of adiabatic circuits is rooted in electronics know-how stretching all the way back to the 1960s and has potential applications in vastly increasing the energy efficiency of far-future computing. But now, the field is experiencing an increa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa8696ed5235f9dbea75eb25f94d7534
https://doi.org/10.1109/iccd50377.2020.00018
https://doi.org/10.1109/iccd50377.2020.00018
Autor:
Brian D. Tierney, Matthew J. Marinella, Robert Kaplar, Sandeepan DasGupta, Jeramy R. Dickerson, Albert G. Baca, Sukwon Choi, Shahed Reza
Publikováno v:
IEEE Transactions on Electron Devices. 64:3740-3747
A distributed impedance “field cage” structure is proposed and evaluated for electric field control in GaN-based, lateral high electron mobility transistors operating as kilovolt-range power devices. In this structure, a resistive voltage divider
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc22b914d071b197822ba292b6666a6e
https://doi.org/10.1109/ted.2017.2729544
https://doi.org/10.1109/ted.2017.2729544
Autor:
Matthew J. Marinella, Brian D. Tierney, Harold P. Hjalmarson, Robin B. Jacobs-Gedrim, Conrad D. James, Sapan Agarwal
Publikováno v:
Applied Physics A. 124
A unified physics-based model of electron transport in metal-insulator-metal (MIM) systems is presented. In this model, transport through metal-oxide interfaces occurs by electron tunneling between the metal electrodes and oxide defect states. Transp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d351d50dc381004f99013e95c03b010
https://doi.org/10.1007/s00339-018-1632-3
https://doi.org/10.1007/s00339-018-1632-3
We created a highly efficient, universal 3D quant um transport simulator. We demonstrated that the simulator scales linearly - both with the problem size (N) and number of CPUs, which presents an important break-through in the field of computational
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e8c2b3af7d5c0dffefcc6ea62c4ee93
https://doi.org/10.2172/1160288
https://doi.org/10.2172/1160288
Autor:
Brian D. Tierney, Sandeepan DasGupta, Sukwon Choi, Jeramy R. Dickerson, Shahed Reza, Sapan Agarwal, Albert G. Baca, Robert J. Kaplar, Matthew J. Marinella
Publikováno v:
ECS Meeting Abstracts. :2254-2254
AlGaN/GaN High Electron Mobility Transistors (HEMTs) are very promising devices for the next generation of high-voltage power electronics. Their ability to achieve a low on-state resistance due to the high electron mobility in the 2DEG conduction cha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f841f4bda6023320fbafa22a9ca4ca2f
https://doi.org/10.1149/ma2016-02/35/2254
https://doi.org/10.1149/ma2016-02/35/2254
Publikováno v:
Journal of Physics: Conference Series. 109:012034
A spin field effect transistor (spin-FET) has been fabricated that employs nanomagnets as components of quantum point contact (QPC) structures to inject spin-polarized carriers into the high-mobility two-dimensional electron gas (2DEG) of a GaAs quan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5551325b1aeb91b7b6dd817751989214
https://doi.org/10.1088/1742-6596/109/1/012034
https://doi.org/10.1088/1742-6596/109/1/012034