Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Brian Cardineau"'
Autor:
Harold Stokes, Brian Cardineau, Jason K. Stowers, Chang Shu-Hao, Stephen T. Meyers, Michael Kocsis, Moeen Ghafoor, Masahiko Harumoto, Pieter Vanelderen, Saika Muntaha Bari
Publikováno v:
Extreme Ultraviolet (EUV) Lithography XI.
For generations lithographers have worked to overcome the difficulties associated with defect mitigation, and since EUV lithography has become mature enough for HVM this concern is warranting ever increasing attention to make such processes profitabl
Autor:
Koichi Miyauchi, Deanna Soucie, Robert L. Brainard, William Earley, Brian Cardineau, Arata Takahashi, Takashi Aoki, Kenji Hosoi
Publikováno v:
Journal of Photopolymer Science and Technology. 30:351-359
Autor:
Takashi Aoki, Koichi Miyauchi, Brian Cardineau, Jay Chun, Arata Takahashi, Robert L. Brainard, Michael O’Sullivan, William Earley, Kenji Hosoi, Deanna Soucie
Publikováno v:
SPIE Proceedings.
The synthesis and lithographic evaluation of 193-nm and EUV photoresists that utilize a higher-order reaction mechanism of deprotection is presented. Unique polymers utilize novel blocking groups that require two acid-catalyzed steps to be removed. W
Autor:
Michaela Vockenhuber, Robert L. Brainard, Miles Marnell, Yasin Ekinci, Hashim Al-Mashat, Brian Cardineau, Daniel A. Freedman, Ryan Del Re, Chandra Sarma
Publikováno v:
Microelectronic Engineering. 127:44-50
We have studied the photolysis of tin clusters of the type [(RSn) 12 O 14 (OH) 6 ] X 2 using extreme ultraviolet (EUV, 13.5 nm) light, and developed these clusters into novel high-resolution photoresists. A thin film of [(BuSn) 12 O 14 (OH) 6 ][ p -t
Autor:
Miriam Sortland, Chandra Sarma, Daniel A. Freedman, James Passarelli, Brian Cardineau, Ryan Del Re, Robert L. Brainard
Publikováno v:
Journal of Photopolymer Science and Technology. 27:655-661
Autor:
Miles Wilklow-Marnell, Rachel Kaminski, David Moglia, Michael C. Murphy, Yasin Ekinci, Robert L. Brainard, Peter Nastasi, Miriam Sortland, Kara Heard, Brian Cardineau, Daniel A. Freedman, Hashim Al-Mashat, Ryan Del Re, Benjamin Steimle, Michaela Vockenhuber, Amber Aslam
Publikováno v:
Journal of Micro/Nanolithography, MEMS, and MOEMS. 17:1
We have developed inorganic oxalate compounds [PPh3(CH2Ph)][M(2,2′-bipyridine)n(oxalate)(3-n)] (n=1, 2, 3; M = Co, Fe, Cr) capable of acting as negative-tone extreme ultraviolet (EUV) resists. Two important trends are observed: (1) sensitivity incr
Publikováno v:
Journal of Photopolymer Science and Technology. 26:665-671
Autor:
Kai Jiang, Benjamin L. Clark, Werner Gillijns, Edson Joseph B, Michael Greer, Peter De Schepper, Danilo De Simone, Stephen T. Meyers, Michael Kocsis, Jeremy T. Anderson, Geert Vandenberghe, Andrew Grenville, Alan J. Telecky, Brian Cardineau, Jason K. Stowers
Publikováno v:
SPIE Proceedings.
Inpria continues to leverage novel metal oxide materials to produce high resolution photoresists for EUV lithography with high optical density and etch resistance. Our resists have previously demonstrated 13nm line/space patterns at 35 mJ/cm2, with e
Autor:
Brian Cardineau
Organometallic resist systems have been designed for extreme ultraviolet (EUV) lithography with very promising results. A novel system of photoresist was developed for EUV which has been named molecular organometallic resists for EUV (MORE). Over 68
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e3900c493505f90ca842f96f968bca0
https://doi.org/10.1016/b978-0-08-100354-1.00011-9
https://doi.org/10.1016/b978-0-08-100354-1.00011-9
Publikováno v:
Journal of Photopolymer Science and Technology. 25:575-581