Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Brett Yatzor"'
Autor:
Akshit Patel, Trevor Junquera, Kun Yu, Sridhar Kuchibhatla, Nirmal Sundaramoorthy, Harith Sethupathi, Samuel Marble, Casey Biederman, Brett Yatzor, Brian O'Hara, Justin Clements, Chris Torcedo, Marc Berardi, Elizabeth Sunkel, Daniel Costello, Tyler Reynolds, Michael Hatzistergos, Vincent Sih, Bradley Morgenfield, Olugbenga Famodu
Publikováno v:
2023 34th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::090c11c3d9ea4b58b790526b9fd6396c
https://doi.org/10.1109/asmc57536.2023.10121068
https://doi.org/10.1109/asmc57536.2023.10121068
Autor:
Stephan Grunow, Balasubramanian S. Haran, Zeynel Bayindir, Joseph F. Shepard, Jinping Liu, Brett Yatzor, Han Tao, Sanjay Mehta, Marc Berardi, Haifeng Sheng, Rishikesh Krishnan
Publikováno v:
ECS Transactions. 85:717-728
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8dfa5611d181ced6b471f8ca7129417b
https://doi.org/10.1149/08513.0717ecst
https://doi.org/10.1149/08513.0717ecst
Autor:
Andrew J. Martin, Brett Yatzor
Publikováno v:
Microscopy and microanalysis : the official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada. 25(3)
Understanding and resolving discrepancies between atom probe tomography (APT) and secondary ion mass spectrometry (SIMS) measurements of B dopants in Si-based materials has long been a problem for those in the semiconductor community who wish to meas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::38a113095a771384d0a1971f163689d4
https://pubmed.ncbi.nlm.nih.gov/30862323
https://pubmed.ncbi.nlm.nih.gov/30862323
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 29:217-222
A method for low pressure chemical vapor deposition of silicon nitride that utilizes thermal ramping during multiple deposition steps is demonstrated in a 300 mm vertical batch reactor. Temperature ramp rates in each heater zone are optimized to depo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0f595ac19b0a814a5d48c28372b5abb
https://doi.org/10.1109/tsm.2016.2558460
https://doi.org/10.1109/tsm.2016.2558460
Publikováno v:
SPIE Proceedings.
The prospect of EUVL (Extreme Ultraviolet Lithography) insertion into HVM (High Volume Manufacturing) has never been this promising. As technology is prepared for "lab to fab" transition, it becomes important to comprehend challenges associated with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6575460dc53afb9c76ae14eb0919cf6
https://doi.org/10.1117/12.2258393
https://doi.org/10.1117/12.2258393
Autor:
Sanjay Mehta, Haifeng Sheng, Rishikesh Krishnan, Bala Haran, Tao Han, Marc Berardi, Zeynel Bayndir, Brett Yatzor, Jinping Liu, Joseph Shepard, Stephan Grunow
Publikováno v:
ECS Meeting Abstracts. :1183-1183
As device dimensions scale, defect-free, robust gap filling in high aspect ratio structures such as STI and inter-gate spaces becomes increasingly challenging. This is due to very high aspect ratio (AR) of gap fill structure (AR > 7:1), shrinking CDs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc7aec0fd48ea29c5f805a2d0a1617b6
https://doi.org/10.1149/ma2018-01/17/1183
https://doi.org/10.1149/ma2018-01/17/1183
Autor:
Martin, Andrew J., Yatzor, Brett
Publikováno v:
Microscopy & Microanalysis; Jun2019, Vol. 25 Issue 3, p617-624, 8p
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing; Aug2016, Vol. 29 Issue 3, p217-222, 6p
Publikováno v:
Surface & Interface Analysis: SIA; Mar2015, Vol. 47 Issue 3, p371-376, 6p