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pro vyhledávání: '"Brett Rolfson"'
Publikováno v:
SPIE Proceedings.
Unpolarized light has traditionally been used for photolithography. However, polarized light can improve contrast and exposure latitudes at high numerical aperture (NA), especially for immersion lithography with an NA > 1.0. As polarized light passes
Autor:
R. Housley, B. Baggenstoss, Erik Byers, Brett Rolfson, Christopher J. Progler, S. Agarwal, J. Buntin
Publikováno v:
SPIE Proceedings.
Low k 1 lithography poses a number of challenges to the process development engineer. Although polarization and immersion lithography will allow us to create processes at lower k 1 than previous paradigms allowed, the lithographer will quickly be loo
Autor:
Barton A. Katz, Patrick Reynolds, Craig B. Sager, Richard Rogoff, James Foster, J. Brett Rolfson, William T. Rericha, Richard D. Holscher
Publikováno v:
SPIE Proceedings.
There is growing consensus that 350 nm design rules will be accomplished using i-line lithography. Recent developments in i-line lithography have pushed NA and field size to acceptable levels for 64 MB DRAM manufacturing. Simpler PSM technologies may
Autor:
Linard Karklin, Paul Frank Luehrmann, Steve K. Brainerd, Hans Jasper, Sunny Stalnaker, J. Brett Rolfson, Peter van Oorschot
Publikováno v:
SPIE Proceedings.
Trends in optical lithography lead to 0.35 micrometers resolution as being the next critical linewidth for semiconductor production. The 64 Mb DRAM technologies will require this. Current i-line lithography techniques lack sufficient production toler
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