Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Brett Rolfson"'
Publikováno v:
SPIE Proceedings.
Unpolarized light has traditionally been used for photolithography. However, polarized light can improve contrast and exposure latitudes at high numerical aperture (NA), especially for immersion lithography with an NA > 1.0. As polarized light passes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5acef2b2f19900a25fe6927c470008ba
https://doi.org/10.1117/12.712251
https://doi.org/10.1117/12.712251
Autor:
R. Housley, B. Baggenstoss, Erik Byers, Brett Rolfson, Christopher J. Progler, S. Agarwal, J. Buntin
Publikováno v:
SPIE Proceedings.
Low k 1 lithography poses a number of challenges to the process development engineer. Although polarization and immersion lithography will allow us to create processes at lower k 1 than previous paradigms allowed, the lithographer will quickly be loo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ebff7c948686dd67c9bfe2f356ba38a
https://doi.org/10.1117/12.712368
https://doi.org/10.1117/12.712368
Autor:
Barton A. Katz, Patrick Reynolds, Craig B. Sager, Richard Rogoff, James Foster, J. Brett Rolfson, William T. Rericha, Richard D. Holscher
Publikováno v:
SPIE Proceedings.
There is growing consensus that 350 nm design rules will be accomplished using i-line lithography. Recent developments in i-line lithography have pushed NA and field size to acceptable levels for 64 MB DRAM manufacturing. Simpler PSM technologies may
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad016602c9024f7745ca1f9edbbbf0bf
https://doi.org/10.1117/12.175437
https://doi.org/10.1117/12.175437
Autor:
Linard Karklin, Paul Frank Luehrmann, Steve K. Brainerd, Hans Jasper, Sunny Stalnaker, J. Brett Rolfson, Peter van Oorschot
Publikováno v:
SPIE Proceedings.
Trends in optical lithography lead to 0.35 micrometers resolution as being the next critical linewidth for semiconductor production. The 64 Mb DRAM technologies will require this. Current i-line lithography techniques lack sufficient production toler
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1317f8106bd4423023caeb786a6c6fc
https://doi.org/10.1117/12.150419
https://doi.org/10.1117/12.150419
Conference
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Autor:
Thakur, R.P.S., Turner, C.
Publikováno v:
Applied Physics Letters; 11/28/1994, Vol. 65 Issue 22, p2809, 3p, 2 Black and White Photographs, 3 Graphs
Publikováno v:
CleanRooms; Jul2003, Vol. 17 Issue 7, p16, 1/2p