Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Brett E. Ley"'
Autor:
Corinne E. Packard, Steve Johnston, Aaron J. Ptak, Noor Alkurd, David L. Young, Alessandro Cavalli, David R. Diercks, Dennice M. Roberts, John Simon, Brett E. Ley
Publikováno v:
IEEE Journal of Photovoltaics. 12:337-343
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5677e75989f39d76c61092746cac18e8
https://doi.org/10.1109/jphotov.2021.3120514
https://doi.org/10.1109/jphotov.2021.3120514
Autor:
John Simon, Corinne E. Packard, David L. Young, Brett E. Ley, Alessandro Cavalli, Aaron J. Ptak, Noor Alkurd
Publikováno v:
2019 IEEE 46th Photovoltaic Specialists Conference (PVSC).
Mesoporous Ge was generated by bipolar electrochemical etching of (100) Ge. Through high-temperature annealing experiments, we found that the mesoporous Ge microstructure produces pore coalescence deep in the structure rather than at the surface. III
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcbaabf696d4a067521145d914ec52b1
https://doi.org/10.1109/pvsc40753.2019.8980660
https://doi.org/10.1109/pvsc40753.2019.8980660
Autor:
Alessandro Cavalli, Kevin L. Schulte, David L. Young, Aaron J. Ptak, Corinne E. Packard, Brett E. Ley, John Simon, Steve Johnston, Dana Sulas
Publikováno v:
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC).
We spalled 2-inch Ge wafers using a Ni stressor layer and grew GaAs solar cells by hydride vapor phase epitaxy on the spalled Ge surface without other surface treatments. The controlled spalling procedure leaves behind arrest lines, which are paralle
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e196565af28a5785dfc6f02850b74511
https://doi.org/10.1109/pvsc.2018.8548112
https://doi.org/10.1109/pvsc.2018.8548112