Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Bret Whitaker"'
Autor:
Charles L. Britton, S.S. Frank, Laura D. Marlino, Bret Whitaker, Alexander B. Lostetter, Milton Nance Ericson, Michael D. Glover, Ty McNutt, Mihir Mudholkar, Paul Shepherd, A. Matthew Francis, Homer Alan Mantooth, Adam Barkley
Publikováno v:
IEEE Journal of Emerging and Selected Topics in Power Electronics. 2:425-433
The design and test of the first undervoltage lock-out circuit implemented in a low-voltage 4H silicon carbide process capable of single-chip integration with power MOSFETs is presented. The lock-out circuit, a block of the protection circuitry of a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffaa37b9c81d59e7d377dff39044b2e7
https://doi.org/10.1109/jestpe.2014.2313119
https://doi.org/10.1109/jestpe.2014.2313119
Autor:
Jae Seung Lee, Koji Shiozaki, Adam Barkley, Alexander B. Lostetter, Zach Cole, Ty McNutt, Daniel Martin, Brandon Passmore, Bret Whitaker
Publikováno v:
IEEE Transactions on Power Electronics. 29:2606-2617
This paper presents an isolated on-board vehicular battery charger that utilizes silicon carbide (SiC) power devices to achieve high density and high efficiency for application in electric vehicles (EVs) and plug-in hybrid EVs (PHEVs). The proposed l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23b2196e878731da1c0fda6577050dd8
https://doi.org/10.1109/tpel.2013.2279950
https://doi.org/10.1109/tpel.2013.2279950
Autor:
Alex Lostetter, Ty McNutt, Paul Shepherd, Ranjan Lamichhane, Michael D. Glover, S.S. Frank, Zach Cole, A. Matthew Francis, C.L. Britton, Brandon Passmore, Sei-Hyung Ryu, Bret Whitaker, Alan Mantooth, Laura D. Marlino, Adam Barkley, Dave Grider, Nance Ericson, Javier Valle-Mayorga, Mihir Mudholkar
Publikováno v:
IEEE Transactions on Power Electronics. 29:539-542
A gate buffer fabricated in a 2-μm 4H silicon carbide (SiC) process is presented. The circuit is composed of an input buffer stage with a push-pull output stage, and is fabricated using enhancement mode N-channel FETs in a process optimized for SiC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a38f6745252bd6498e893adc7e8c253
https://doi.org/10.1109/tpel.2013.2271906
https://doi.org/10.1109/tpel.2013.2271906
Publikováno v:
2015 IEEE Applied Power Electronics Conference and Exposition (APEC).
This paper presents a push-pull converter as a promising alternative to more complex and more costly isolated dc-dc converters for cost-sensitive, high-performance applications. The push-pull converter utilizes silicon carbide (SiC) power devices alo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf8f0fda0ebeab58bbbc1d506d00b947
https://doi.org/10.1109/apec.2015.7104628
https://doi.org/10.1109/apec.2015.7104628
Autor:
Laura D. Marlino, Zach Cole, Bret Whitaker, A. Matthew Francis, Paul Shepherd, Charles L. Britton, S.S. Frank, M. Nance Ericson, Ranjan Lamichhane, Ty McNutt, Alex Lostetter, Alan Mantooth, Michael D. Glover, Daniel Martin, Brandon Passmore
Publikováno v:
2014 IEEE Workshop on Wide Bandgap Power Devices and Applications.
This paper presents the testing results of an all-silicon carbide (SiC) intelligent power module (IPM) for use in future high-density power electronics applications. The IPM has high-temperature capability and contains both SiC power devices and SiC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60459be4df72c116600b2f1023057c38
https://doi.org/10.1109/wipda.2014.6964620
https://doi.org/10.1109/wipda.2014.6964620
Autor:
A. Matthew Francis, Zach Cole, Brandon Passmore, Devon D. Janke, M. Nance Ericson, S.S. Frank, Bret Whitaker, Michael D. Glover, Dianne Ezell, Ty McNutt, H. Alan Mantooth, Paul Shepherd, Sei-Hyung Ryu, Charles L. Britton, Laura D. Marlino, Ranjan Lamichhane
Publikováno v:
2014 IEEE Workshop on Wide Bandgap Power Devices and Applications.
A gate driver fabricated in a 2-um 4H silicon carbide (SiC) process is presented. This process was optimized for vertical power MOSFET fabrication but accommodated integration of a few low-voltage device types including N-channel MOSFETs, resistors,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68302f2767279ec790a2e611e041f50b
https://doi.org/10.1109/wipda.2014.6964626
https://doi.org/10.1109/wipda.2014.6964626
Autor:
Zach Cole, A. Matthew Francis, Nance Ericsson, S.S. Frank, Ty McNutt, Paul Shepherd, Sonia Perez, Alan Mantooth, Michael D. Glover, C.L. Britton, Bret Whitaker, Laura D. Marlino, Ranjan Lamichhane
Publikováno v:
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
Limitations of silicon (Si) based power electronic devices can be overcome with Silicon Carbide (SiC) because of its remarkable material properties. SiC is a wide bandgap semiconductor material with larger bandgap, lower leakage currents, higher brea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05df8577fe56787b95c88176d0acae91
https://doi.org/10.1109/ispsd.2014.6856064
https://doi.org/10.1109/ispsd.2014.6856064
Autor:
Kraig Olejniczak, Alex Lostetter, Robert Shaw, Brandon Passmore, Zach Cole, Brice McPherson, Adam Barkley, Bradley A. Reese, Daniel Martin, Ty McNutt, Bret Whitaker
Publikováno v:
2013 4th IEEE International Symposium on Power Electronics for Distributed Generation Systems (PEDG).
APEI, Inc. manufactures high performance, high temperature wide bandgap discrete packages, multi-chip power modules (MCPMs), and integrated systems for extreme environment applications. In this paper, APEI, Inc. presents two MCPMs, the HT-2000 and X-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e8d23b72324da58fa140916aeed3274
https://doi.org/10.1109/pedg.2013.6785623
https://doi.org/10.1109/pedg.2013.6785623
Publikováno v:
2013 4th IEEE International Symposium on Power Electronics for Distributed Generation Systems (PEDG).
This paper presents a high-frequency bridgeless boost converter that implements power factor correction (PFC) and is a part of a two-stage on-board battery charger. The converter benefits from the advanced properties of silicon carbide (SiC) power de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2da6efee253fd35b1e07aff3b0a2e8a
https://doi.org/10.1109/pedg.2013.6785611
https://doi.org/10.1109/pedg.2013.6785611
Publikováno v:
2013 IEEE ECCE Asia Downunder.
This paper presents a phase-shifted full-bridge (PSFB) converter that utilizes silicon carbide (SiC) power devices to achieve a high-density and high-efficiency solution for isolated dc-dc converter applications. Specifically, this converter represen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02a00a24ae3ba616fc996d3fe2e35917
https://doi.org/10.1109/ecce-asia.2013.6579266
https://doi.org/10.1109/ecce-asia.2013.6579266