Zobrazeno 1 - 10
of 251
pro vyhledávání: '"Brent P. Gila"'
Autor:
Stepehn J. Pearton, Jenshan Lin, Cammy R. Abernathy, David P. Norton, Brent P. Gila, Fan Ren, Li- Chia Tien, Hung-Ta Wang, Byoung Sam Kang
Publikováno v:
Sensors, Vol 6, Iss 6, Pp 643-666 (2006)
In this review we discuss the advances in use of GaN and ZnO-based solid-statesensors for gas sensing applications. AlGaN/GaN high electron mobility transistors(HEMTs) show a strong dependence of source/drain current on the piezoelectricpolarization
Externí odkaz:
https://doaj.org/article/6088486c6a604033b4b5a6aa24a464ec
Autor:
Brent P Gila
Publikováno v:
Microscopy and Microanalysis. 28:2966-2968
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08eddc26f2cc2377465d7160cbef1c85
https://doi.org/10.1017/s1431927622011114
https://doi.org/10.1017/s1431927622011114
Publikováno v:
Journal of Vacuum Science & Technology A. 40
(Sc2O3)x(Ga2O3)1−x was grown by molecular beam epitaxy at low temperatures (100 °C) using a variety of growth sequences to avoid surface segregation of Ga. Continuous and digital growth techniques always produced Ga segregation. This surface segre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::035758949f1d750f5a60ce9496c2e916
https://doi.org/10.1116/6.0001805
https://doi.org/10.1116/6.0001805
Autor:
Jian-Sian Li, Xinyi Xia, Chao-Ching Chiang, David C. Hays, Brent P. Gila, Valentin Craciun, Fan Ren, S. J. Pearton
Publikováno v:
Journal of Vacuum Science & Technology A. 41:013405
The characteristics of sputtered NiO for use in pn heterojunctions with Ga2O3 were investigated as a function of sputtering parameters and postdeposition annealing temperature. The oxygen/ nickel and Ni2O3/NiO ratios, as well as the bandgap and resis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a18d8035272ecf449424ff98e8796798
https://doi.org/10.1116/6.0002250
https://doi.org/10.1116/6.0002250
Publikováno v:
Journal of Vacuum Science & Technology A. 40:062701
The (SmxGa1−x)2O3 alloy system is a potential new dielectric for compound semiconductors such as GaAs. Using molecular beam epitaxy under metal-modulated growth conditions, we grew the binary oxide, Sm2O3, at two substrate temperatures (100 and 500
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe57863acbc4db593e4a1eff048a4339
https://doi.org/10.1116/6.0002135
https://doi.org/10.1116/6.0002135
Autor:
Stephen J. Pearton, Chaker Fares, Brent P. Gila, Holger von Wenckstern, Marius Grundmann, Marko J. Tadjer, Fan Ren, Max Kneiss, David C. Hays
Publikováno v:
ECS Transactions. 92:79-88
β-Ga2O3 is a wide bandgap semiconductor (~4.8 eV) with properties suited to power electronics, truly solar-blind UV detection, and extreme environment applications. Additional bandgap tunability can be achieved through incorporation of Al into β-Ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4bd3bbf7caab08bf2dd396a009d60e31
https://doi.org/10.1149/09207.0079ecst
https://doi.org/10.1149/09207.0079ecst
Publikováno v:
Journal of Electronic Materials. 48:1568-1573
The wide-bandgap ternary (AlxGa1−x)2O3 forms a heterostructure system with Ga2O3 that is attracting attention for modulation-doped field-effect transistors. The options for gate dielectric on (AlxGa1−x)2O3 are limited by the need for adequate ban
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::695deaf80de2d56e5f08c81c3cc0069e
https://doi.org/10.1007/s11664-018-06885-x
https://doi.org/10.1007/s11664-018-06885-x
Publikováno v:
ECS Journal of Solid State Science and Technology. 8:Q3001-Q3006
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ead9fb125fc3f1b2e750bb16c623330
https://doi.org/10.1149/2.0021907jss
https://doi.org/10.1149/2.0021907jss
Publikováno v:
ECS Journal of Solid State Science and Technology. 7:P519-P523
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::697d8e473e71d14b2b2e58d4ded13a92
https://doi.org/10.1149/2.0041810jss
https://doi.org/10.1149/2.0041810jss
Autor:
Fan Ren, Soohwan Jang, Stephen J. Pearton, Patrick H. Carey, Brent P. Gila, David C. Hays, Akito Kuramata
Publikováno v:
Applied Surface Science. 422:179-183
The valence band offsets in rf-sputtered Indium Tin Oxide (ITO)/single crystal β-Ga2O3 (ITO/Ga2O3) heterostructures were measured with X-Ray Photoelectron Spectroscopy using the Kraut method. The bandgaps of the component materials in the heterostru
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::412a681fa8d1af66b9f18489bb063073
https://doi.org/10.1016/j.apsusc.2017.05.262
https://doi.org/10.1016/j.apsusc.2017.05.262