Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Brent Boerger"'
Publikováno v:
Microelectronic Engineering. 85:734-737
Laser copper plasma sources are a compact, economical means of producing high intensity X-rays at the correct wavelengths for X-ray lithography. Copper debris in the form of vapor, ions, dust, and high speed particles is an unwanted byproduct of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b24ddbef66fdc2f22b1e544587bbf505
https://doi.org/10.1016/j.mee.2007.12.033
https://doi.org/10.1016/j.mee.2007.12.033
Autor:
Brent Boerger, Dryver R. Huston, James Osborne Plumpton, Dylan Burns, Robert Selzer, Brian Esser
Publikováno v:
Microelectronic Engineering. 83:923-925
Proximity lithography using thin membrane window structures to carry masking patterns during radiation exposure steps is reaching levels of such high precision that the process can benefit from active elastic control of membrane deformations. This pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91635ee065245ffc7ec3b0d95d5fc3a8
https://doi.org/10.1016/j.mee.2006.01.042
https://doi.org/10.1016/j.mee.2006.01.042
Autor:
D. Ducharme, Michael J. Trybendis, D. Ronning, Brent Boerger, M. Yu, B. Xing, B. Grenon, R. Selzer
Publikováno v:
22nd European Mask and Lithography Conference.
The ability to convert high resolution images from a Scanning Electron Microscope (SEM) of a printed lithographic pattern to a GDS image file which can be input into modeling software (such as litho-simulation, etc.) for rigorous analysis is a powerf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09fc1000392b4f71e31d20081167efe9
https://doi.org/10.1117/12.692747
https://doi.org/10.1117/12.692747
Publikováno v:
SPIE Proceedings.
Proximity lithography places a thin membrane mask into close proximity (5-100 micron) to a wafer for exposure to radiation and pattern placement. Efficient production practices require that the wafer be positioned relative to the mask as quickly as p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e57d4e84ddf9d8908a15c3fcce5b498
https://doi.org/10.1117/12.660798
https://doi.org/10.1117/12.660798
Autor:
Robert Selzer, Mengchen Yu, Yungsheng Ma, Michael J. Trybendis, Donald Ronning, Donald Ducharme, Brent Boerger, Brian Grenon
Publikováno v:
SPIE Proceedings.
The concept of using Scanning Electron Microscopy and Die-to-Database techniques to rigorously inspect advanced lithography products such as X-ray Lithography, Imprint, and Stencil masks as well as other Next Generation Lithography (NGL) is compellin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35d7d5c8203be7aab45fefbe2f1623a8
https://doi.org/10.1117/12.659447
https://doi.org/10.1117/12.659447
Autor:
Martin Peckerar, Brent Boerger, Neil Van Wyck, Z. Dilli, Robert Benjamin Proctor, Daniel A. Lowy, Brian Grenon, Mahsa Dornajafi, James Gravelin, Neil Goldsman, Yves Ngu
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 29:011008
Ultracapacitors represent an essential storage element in a variety of hybrid energy sources, ranging from automobile power systems to low-power motes in a distributed sensor network. Hydrated ruthenium (IV) oxide has demonstrated superior performanc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc6c7f596003c3b1436298a63df93a99
https://doi.org/10.1116/1.3524906
https://doi.org/10.1116/1.3524906
Autor:
Michael J. Trybendis, K. Myers, Yuansheng Ma, M. Yu, Q. Leonard, Henry I. Smith, James Taylor, Brent Boerger, Daniel H. Malueg, E. Moon, J. Wallace, Scott Dhuey, Francesco Cerrina, R. Selzer
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 23:2896
We show the first results from a newly-operation advanced x-ray stepper, and describe an improved type of x-ray mask for use on it. The Mod 5C is the newest x-ray stepper developed by JMAR (JSAL Nanolithography). It is configured for installation at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48097cee673bca5201a8f62b895f0a52
https://doi.org/10.1116/1.2121711
https://doi.org/10.1116/1.2121711