Zobrazeno 1 - 10
of 43
pro vyhledávání: '"Brent A. Wacaser"'
Autor:
Hussam Khonkar, Yves Martin, Hans Philipp Annen, Alhassan Badahdah, Ling Fu, Brent A. Wacaser, Peter D. Kirchner, Robert L. Sandstrom, Ralf Leutz, Dhiren Patel, Theodore G. Van Kessel, Ben Kim
Publikováno v:
IEEE Journal of Photovoltaics. 5:454-460
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2184ac9f92401ef5761d9f3ca9bb181d
https://doi.org/10.1109/jphotov.2014.2371247
https://doi.org/10.1109/jphotov.2014.2371247
Autor:
Abdulrahman Al Saferan, Fawwaz Al-khaldi, Fawaz Alhadlaq, Hussam Khonkar, Mohammad Halawani, Mazzen Aljuwaied, Brent A. Wacaser, Abdulaziz Alyahya
Publikováno v:
Solar Energy. 110:268-275
Here we present results highlighting the differences that soiling and cleaning have on concentrated photovoltaic arrays (CPV) specifically focusing on ultra high concentration, >1000 Suns, photovoltaic (UHCPV) arrays in a desert environment. Soiling
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f55cd7838a621077aa187472d4ec5d5
https://doi.org/10.1016/j.solener.2014.08.001
https://doi.org/10.1016/j.solener.2014.08.001
Autor:
Supratik Guha, Brent A. Wacaser, Frances M. Ross, Conal E. Murray, Kathleen B. Reuter, P. Chaudhari, Jean Jordan-Sweet, Mark C. Reuter, Heejae Shim
Publikováno v:
Thin Solid Films. 518:5368-5371
A method for growing heteroepitaxial Si films on sapphire was developed using a 6 nm thin Al layer at substrate temperature of 600 °C. Subsequently, the growth of Si nanowires was demonstrated on these films at 490 °C without breaking vacuum. We ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8aa3ab6af024b460e7c2b73c1ad62707
https://doi.org/10.1016/j.tsf.2010.03.034
https://doi.org/10.1016/j.tsf.2010.03.034
Autor:
C.-Y. Wen, Brent A. Wacaser, Suneel Kodambaka, Eric A. Stach, Mark C. Reuter, Frances M. Ross
Publikováno v:
Philosophical Magazine. 90:2807-2816
We discuss the benefits of using metals other than Au to catalyze the growth of Si and Ge nanowires, emphasizing the opportunities that these non-conventional materials provide for tailoring electronic and structural nanowire properties. However, sin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::315e253bfb1e55ef661d36afabdc8a99
https://doi.org/10.1080/14786431003745583
https://doi.org/10.1080/14786431003745583
Autor:
Kimberly A. Dick, Knut Deppert, Jonas Johansson, Lars Samuelson, Magnus T. Borgström, Brent A. Wacaser
Publikováno v:
Advanced Materials. 21:153-165
A review and expansion of the fundamental processes of the vapor-liquid-solid (VLS) growth mechanism for nanowires is presented. Although the focus is on nanowires, most of the concepts may be applicable to whiskers, nanotubes, and other unidirection
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f3db4b89f9f20dcca455c209bc21898
https://doi.org/10.1002/adma.200800440
https://doi.org/10.1002/adma.200800440
Autor:
Knut Deppert, Jessica Bolinsson, Brent A. Wacaser, Lisa Karlsson, Jonas Johansson, Kimberly A. Dick, Lars Samuelson
Publikováno v:
Journal of Crystal Growth. 310:5102-5105
we present results that provide fundamental insights on how to experimentally tailor the planar defect density and even the crystal structure in III-V metal-particle-seeded nanowires, where zinc blende is the stable bulk crystal structure. We have gr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dde4aad87dcab2b55e159abc17818156
https://doi.org/10.1016/j.jcrysgro.2008.08.003
https://doi.org/10.1016/j.jcrysgro.2008.08.003
Autor:
Sören Jeppesen, Knut Deppert, Lars Samuelson, B. Jonas Ohlsson, Brent A. Wacaser, Jakob Birkedal Wagner, Linus Fröberg
Publikováno v:
Nano Letters. 8:3815-3818
We present results on the effect of seed particle reconfiguration on the growth of short InAs and InP nanowire segments. The reconfiguration originates in two different steady state alloy compositions of the Au/In seed particle during growth of InAs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ae29f5de8fdd82a7bddacfc8e796287f
https://doi.org/10.1021/nl802149v
https://doi.org/10.1021/nl802149v
Autor:
Werner Seifert, Brent A. Wacaser, Knut Deppert, Lars Samuelson, Lisa Karlsson, Jonas Johansson, Thomas Mårtensson, C. Patrik T. Svensson
Publikováno v:
Journal of Crystal Growth. 298:635-639
Nanowires of zinc blende crystal structure, grown in the B direction usually have a large number of twin plane defects. In order to investigate this phenomenon, we grow GaP nanowires with metal-organic vapor phase epitaxy. By rotating the nanowires i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::089536e430088bbe0813d17ff9592a92
https://doi.org/10.1016/j.jcrysgro.2006.10.175
https://doi.org/10.1016/j.jcrysgro.2006.10.175
Autor:
Stephen W. Bedell, Cheng-Wei Cheng, D. K. Sadana, Brent A. Wacaser, Kuen-Ting Shiu, William T. Spratt
Publikováno v:
CICC
This review focuses on material challenges associated with III-V co-integration with Si for future CMOS. There is a huge volume of literature on this topic as implementation of III-V monolithic integration with Si has been the holy grail for last fou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74274c9de8dbfc2f978e20555870b258
https://doi.org/10.1109/cicc.2015.7338398
https://doi.org/10.1109/cicc.2015.7338398
Autor:
Brent A. Wacaser, Nunilo N. Eugenio, Peter D. Kirchner, Alhassan Badahdah, Yves Martin, Robert L. Sandstrom, Abdullah Alowais, Abdulaziz Alyahya, Theodore G. VanKessel, Mohammad Halawani, Hussam Khonkar, Mazzen Aljuwaied
Publikováno v:
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC).
We describe a process for increasing power efficiency of concentrator photovoltaic systems by optimizing the lens-to-cell spacing. We find that there is an optimum defocus position with improved power output and reduced sensitivity to pointing errors
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b763ee4c589686587a10f3c1fac1ac6c
https://doi.org/10.1109/pvsc.2015.7355758
https://doi.org/10.1109/pvsc.2015.7355758