Zobrazeno 1 - 10
of 660
pro vyhledávání: '"Brenner, Mark"'
Autor:
Martínez-Abarca, Rodrigo, Pérez, Liseth, Bauersachs, Thorsten, Schenk, Frederik, Kutterolf, Steffen, Brenner, Mark, Guilderson, Thomas, Correa-Metrio, Alex, Anselmetti, Flavio S., Brown, Robert, Ariztegui, Daniel, Macario-González, Laura, Cruz-Silva, Esmeralda, Beltran-Martinez, Juan Carlos, Bush, Mark, Stockhecke, Mona, Curtis, Jason, Schwalb, Antje
Publikováno v:
In Quaternary Science Reviews 15 November 2024 344
Autor:
Kalarickal, Nidhin Kurian, Fiedler, Andreas, Dhara, Sushovan, Rahman, Mohammad Wahidur, Kim, Taeyoung, Xia, Zhanbo, Eddine, Zane Jamal, Dheenan, Ashok, Brenner, Mark, Rajan, Siddharth
In-situ etching using Ga flux in an ultra-high vacuum environment like MBE is introduced as a method to make high aspect ratio 3 dimensional structures in $\beta$-Ga2O3. Etching of $\beta$-Ga2O3 due to excess Ga adatoms on the epilayer surface had be
Externí odkaz:
http://arxiv.org/abs/2105.09503
Autor:
Zhu, Tiancong, O'Hara, Dante J., Noesges, Brenton A., Zhu, Menglin, Repicky, Jacob J., Brenner, Mark R., Brillson, Leonard J., Hwang, Jinwoo, Gupta, Jay A., Kawakami, Roland K.
Publikováno v:
Phys. Rev. Materials 4, 084002 (2020)
We report epitaxial growth of vanadium diselenide (VSe$_2$) thin films in the octahedrally-coordinated (1T) structure on GaAs(111)B substrates by molecular beam epitaxy. Film thickness from a single monolayer (ML) up to 30 ML is demonstrated. Structu
Externí odkaz:
http://arxiv.org/abs/2004.05506
Autor:
Kalarickal, Nidhin Kurian, Xia, Zhanbo, McGlone, Joe, Krishnamoorthy, Sriram, Moore, Wyatt, Brenner, Mark, Arehart, Aaron R., Ringel, Steven A., Rajan, Siddharth
We report on the origin of high Si flux observed during the use of Si as a doping source in plasma assisted MBE growth of \b{eta}-Ga2O3. We show on the basis of secondary ion mass spectroscopy (SIMS) analysis that Si flux is not limited by the vapor
Externí odkaz:
http://arxiv.org/abs/1908.01101
Autor:
Suárez-Mozo, Nancy Yolimar, Brenner, Mark, Kenney, William F., Díaz Asencio, Misael, Curtis, Jason H., Aquino-Lopez, Marco A., Guerra-Castro, Edlin, Simões, Nuno
Publikováno v:
In Estuarine, Coastal and Shelf Science June 2023
Autor:
Waters, Matthew Neal, Brenner, Mark, Curtis, Jason Hilleary, Romero-Oliva, Claudia Suseth, Dix, Margaret, Cano, Manuel
Publikováno v:
Proceedings of the National Academy of Sciences of the United States of America, 2021 Nov . 118(48), 1-8.
Externí odkaz:
https://www.jstor.org/stable/27094060
Autor:
O'Hara, Dante J., Zhu, Tiancong, Trout, Amanda H., Ahmed, Adam S., Yunqiu, Luo, Lee, Choong Hee, Brenner, Mark R., Rajan, Siddharth, Gupta, Jay A., McComb, David W., Kawakami, Roland K.
Publikováno v:
D. J. O'Hara et al., Nano Letters 18, 3125 (2018)
Monolayer van der Waals (vdW) magnets provide an exciting opportunity for exploring two-dimensional (2D) magnetism for scientific and technological advances, but the intrinsic ferromagnetism has only been observed at low temperatures. Here, we report
Externí odkaz:
http://arxiv.org/abs/1802.08152
Autor:
Zhang, Yuewei, Neal, Adam, Xia, Zhanbo, Joishi, Chandan, Zheng, Yuanhua, Bajaj, Sanyam, Brenner, Mark, Mou, Shin, Dorsey, Donald, Chabak, Kelson, Jessen, Gregg, Hwang, Jinwoo, Heremans, Joseph, Rajan, Siddharth
Beta-phase Ga2O3 has emerged as a promising candidate for a wide range of device applications, including power electronic devices, radio-frequency devices and solar-blind photodetectors. The wide bandgap energy and the predicted high breakdown field,
Externí odkaz:
http://arxiv.org/abs/1802.04426
Autor:
Kutterolf, Steffen1 (AUTHOR) skutterolf@geomar.de, Brenner, Mark2 (AUTHOR), Dull, Robert A.3 (AUTHOR), Freundt, Armin1 (AUTHOR), Kallmeyer, Jens4 (AUTHOR), Krastel, Sebastian5 (AUTHOR), Katsev, Sergei6 (AUTHOR), Lebas, Elodie5,7 (AUTHOR), Meyer, Axel8 (AUTHOR), Pérez, Liseth9 (AUTHOR), Rausch, Juanita10 (AUTHOR), Saballos, Armando11 (AUTHOR), Schwalb, Antje9 (AUTHOR), Strauch, Wilfried11 (AUTHOR)
Publikováno v:
Scientific Drilling. Oct2023, Vol. 32, p73-84. 12p.
Autor:
Krishnamoorthy, Sriram, Xia, Zhanbo, Joishi, Chandan, Zhang, Yuewei, McGlone, Joe, Johnson, Jared, Brenner, Mark, Arehart, Aaron R., Hwang, Jinwoo, Lodha, Saurabh, Rajan, Siddharth
Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of modulation-doped two-dimensional electron gas (2DEG) at beta(Al0.2Ga0.8)2O3/
Externí odkaz:
http://arxiv.org/abs/1706.09492